Intermolecular, Inc.

Elpida Memory, Inc.

Applied Materials, Inc.

Hanhong Chen

Sandra Guy Malhotra

Hiroyuki Ode

Wim Deweerd

Pragati Kumar

Xiangxin Rui

Edward L Haywood

Sunil Shanker

Imran Hashim

Joseph F AuBuchon

Philip Allan Kraus

Sanjeev Baluja

Toshiyuki Hirota

Mitsuhiro Horikawa

Kenichi Koyanagi

Arkaprava Dan

Nobumichi Fuchigami

Nobi Fuchigami

Tony P Chiang

Michael Robert Rice

Indranil De

Kevin Griffin

Prashant B Phatak

Monica Sawkar Mathur

John C Forster

Kelvin Chan

Anantha K Subramani

Kallol Bera

Kartik Bhupendra Shah

Kenneth Brian Doering

Farzad Houshmand

Chaowei Wang

Karthik Ramani

David Chi

Gerald Donald Richardson

Arthur Gevondyan

David P Thompson

Mark Joseph Saly

Thai Cheng Chua

Lakmal Charidu Kalutarage

Tejas Ulavi

Dhritiman Subha Kashyap

Karthik Ramanathan

Chi-Chou Lin

William John Durand

Hao Zhang

Naonori Fujiwara

Joseph Aubuchon

Kyoung Ha Kim

Zhejun Zhang

Rohit Ode

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Methods of operating a spatial deposition tool

Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Plasma showerhead assembly and method of reducing defects

Plasma showerheads with improved gas uniformity, and a plasma showerhead with angled gas nozzles are disclosed. Also disclosed are gas nozzles having a vertical offset angle and/or a directional offset angle. None of the gas channels and/or the gas nozzles intersect with the plasma regions of the showerhead.

Plasma showerhead with improved uniformity

Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Dithering or dynamic offsets for improved uniformity

A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

PEALD nitride films

Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes Nand one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N. In embodiments, the hydrogen-containing gas includes at least one of H(molecular hydrogen), NH(ammonia), NH(diazene), NH(hydrazine), and HN(hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

Method of forming silicon nitride films using microwave plasma

A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

PEALD titanium nitride with direct microwave plasma

Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

Methods for controlling a flow pulse shape

Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

Machine learning based smart process recipe builder to improve azimuthal flow and thickness uniformity

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

Plasma source for rotating susceptor

Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

Complementary pattern station designs

Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

Methods to deposit flowable (gap-fill) carbon containing films using various plasma sources

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Milpitas, CA, United States of America

Hanhong Chen