Applied Materials, Inc.

Baker Hughes Oilfield Operations LLC

Baker Hughes Holdings LLC

Hanh D Nguyen

Philip Allan Kraus

Thai Cheng Chua

Dmitry Lubomirsky

Wei Liu

Shankar Venkataraman

Soonam Park

Qiwei Liang

Son Truong Nguyen

Xinglong Chen

Toan Q Tran

Adib M Khan

Jang-Gyoo Yang

Kien Nai Chuc

Roger Curtis

Philip A Bottini

Kallol Bera

Matthew L Miller

Johanes F Swenberg

Karl J Armstrong

Joe Griffith Cruz

Christian Amormino

Majeed Foad

Dieter Haas

Xiaoxiong Yuan

Bencherki Mebarki

Naima Bestaoui-Spurr

Johanes S Swenberg

Angela Anh Doan

Chikuang Charles Wang

Andrew Christopher Holley

James J Chen

Christian Valencia

Matthew Miller

Michael J Mark

Violeta Ramos-Edwards

Cuong C Nguyen

Hong Bee Teoh

Randy Vrana

Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.

Remote modular high-frequency source

Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene

Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Flow control features of CVD chambers

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Modular high-frequency source

Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

Modular high-frequency source with integrated gas distribution

Non-aqueous drilling fluids may be removed from a wellbore or tubing nor casing within the wellbore by introducing into the well a biodegradable aqueous fluid comprising banana.

Method of removing non-aqueous drilling mud with banana containing fluid

Embodiments disclosed herein include a high-frequency emission module. In an embodiment, the high-frequency emission module comprises a solid state high-frequency power source, an applicator for propagating high-frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In an embodiment, the thermal break comprises a substrate, a trace on the substrate, and a ground plane.

Thermal break for high-frequency antennae

The strength of a proppant or sand control particulate may be improved by coating the proppant to form a composite. The composite has enhanced compressive strength between about 34 to about 130 MPa and minimizes the spalling of fines at closure stresses in excess of 5,000 psi. Conductivity of the proppant pack in the fractures is further enhanced due to the increase in strength of the particles.

Method of treating subterranean formations with composites having enhanced strength

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.

Apparatus for coupling a hot wire source to a process chamber

Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.

Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber

In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.

Gas distribution system

Growing community of inventors

San Jose, CA, United States of America

Hanh D Nguyen