Samsung Electronics Co., Ltd.

Hangeol Lee

Yoonyoung Choi

Seungjin Kim

Byunghyun Lee

Byeongjoo Ku

Sangjae Park

Jinwoo Bae

Hyunsil Hong

Bowo Choi

Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.

Methods of fabricating capacitor and semiconductor device and semiconductor devices and apparatus including the same

A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.

Semiconductor device including storage node electrode having filler and method for manufacturing the same

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Seoul, South Korea

Hangeol Lee