Hewlett-Packard Development Company, L.p.

Hang Liao

Zhizhang Chen

Dennis J Schloeman

Galen H Kawamoto

Richard R Clark

Bao Yeh

Alexander N Govyadinov

Heon Lee

Sriram Ramamoorthi

Timothy F Myers

Leslie Louis Szepesi, Jr

David M Schut

Robert Newton Bicknell

Chin Dixie Huang

Jeffrey A Hintzman

Timothy Mellander

Mike Groh

Michael Setera

Lori Tully

A firing circuit for a thermal inkjet-printing nozzle includes a heater resistor and a switch. The heater resistor heats ink to cause the ink to be ejected from the nozzle. The heater resistor has a first end and a second end, the second end connected to a ground. The switch controls activation of the heater resistor. The switch has a first end connected to a voltage source and a second end connected to the first end of the heater resistor. The switch operates in a constant current mode, such that an at least substantially constant current flows through the heater resistor upon activation.

Constant current mode firing circuit for thermal inkjet-printing nozzle

A transistor device includes a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region, the source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.

Single finger gate transistor

A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

Storage device with charge trapping structure and methods

An electrical memory component is provided, comprising read/write probes and a chalcogenide storage media. Each read/write probe is adapted for selective electrical connection to a memory portion of the chalcogenide storage media and for performing read and write operations upon the memory portion. The chalcogenide storage media has a second plurality of memory portions, and is movably mounted relative to the first plurality of read/write probes for selective electrical connection of the read/write probes to a subset of the memory portions.

Electrical memory component and a method of construction thereof

A method of processing a type III&#x2013;VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated to a temperature in the range of 300&#xb0; C.&#x2013;600&#xb0; C. for a period in the range of 20 seconds to 60 minutes in an atmosphere having a composition of 0&#x2013;10% of hydrogen in nitrogen.

EBIC response enhancement in type III-VI semiconductor material on silicon

A method of depositing polymer thin films on a MEMS device having a wafer stack includes depositing one or more protection films on a polymer thin film layer on the wafer stack, fabricating the MEMS device, and removing the one or more protection films.

MEMS device polymer film deposition process

A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property affected by the active device.

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Corvallis, OR, United States of America

Hang Liao