Telefonaktiebolaget Lm Ericsson (publ)

Biacore Ab

H&aring;kan Sj&ouml;din

Anders S&ouml;derb&auml;rg

Magnus Malmqvist

Mattias Tidare

Ivar Hamberg

Stefan Sj&ouml;lander

H&aring;kan E Roos

Nils &Ouml;gren

Lars-Peter Jacobson

Ralph St&aring;lberg

Hans Hjelmgren

Anders Eklund

An arrangement in a semiconductor component includes a highly doped layer on a substrate layer and is delimited by at least one trench extending from the surface of the component through the highly doped layer. A sub-layer between the substrate layer and the highly doped layer is doped with the same type of dopant as the buried collector, but to a lower concentration. The sub-layer causes a more even distribution of the potential lines in the substrate and in a sub-collector layer, thereby eliminating areas of dense potential lines and increasing the breakdown voltage of the component, (i.e., because the breakdown voltage is lower in areas with dense potential lines).

Trenched semiconductor device with high breakdown voltage

An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

Method and system for improving a transistor model

A semiconductor includes a buried conducting layer, such as a buried collector, comprises a trench, the walls of which are covered with a layer of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall. The dopants will diffuse through the layer and form a low resistance connection to the buried layer. The layer may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer is not in itself conducting, the size of the component may be significantly reduced.

Semiconductor component and manufacturing method for semiconductor component

A conductor 1 crossing a trench around an electrical component 1 is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown occurring in the electrical component.

Method and device relating to semiconductor components

Methods and devices are provided for controlling a fluid flow over a sensing surface within a flow cell. The methods employ laminar flow techniques to position a fluid flow over one or more discrete sensing areas on the sensing surface of the flow cell. Such methods permit selective sensitization of the discrete sensing areas, and provide selective contact of the discrete sensing areas with a sample fluid flow. Immobilization of a ligand upon the discrete sensing area, followed by selective contact with an analyte contained within the sample fluid flow, allows analysis by a wide variety of techniques. Sensitized sensing surfaces, and sensor devices and systems are also provided.

Growing community of inventors

Knivsta, Sweden

Håkan Sjödin

Growing community of inventors

Knivsta, Sweden

H&aring;kan Sj&ouml;din

Håkan Sjödin