Cadence Design Systems, Inc.

Hancheng Liang

Zhihong Liu

Xisheng Zhang

Jianhe Guo

Kwok Kwong Hung

The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

MOSFET modeling for IC design accurate for high frequencies

An exemplary system for measuring noise in a device comprises a CPU, a memory coupled to the CPU, an interface coupled to the CPU for providing instructions processed by the CPU, a control unit coupled to the interface for receiving the instructions, a preamplifier circuit coupled to the control unit for implementing the instructions, a power supply unit controlled by the control unit for providing power to the preamplifier circuit, and a device holder selectively attached to the preamplifier circuit. In an exemplary embodiment, the preamplifier circuit further comprises a plurality of filters, an amplifier circuit, a plurality of switches for switching the amplifier circuit between a voltage amplifier mode and a current amplifier mode, and a variable loading resistor.

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San Jose, CA, United States of America

Hancheng Liang