Samsung Electronics Co., Ltd.

Hanbyul Choi

Dongwon Kim

Keun Hwi Cho

Donggyu Lee

Hojin Lee

Junggun You

Beomjin Park

Sughyun Sung

Myoung-Sun Lee

Jiyong Ha

A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.

Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device

Growing community of inventors

Suwon-si, South Korea

Hanbyul Choi