Qualcomm Incorporated

Hananel Kang

Xiangdong Chen

Venugopal Boynapalli

Hyeokjin Lim

Satyanarayana Sahu

Mukul Gupta

Radhika Vinayak Guttal

Chih-lung Kao

Hyeokjin Bruce Lim

A MOS device includes a first MOS transistor having a first MOS transistor source, a first MOS transistor drain, and a first MOS transistor gate. The MOS device also includes a second MOS transistor having a second MOS transistor source, a second MOS transistor drain, and a second MOS transistor gate. The second MOS transistor source and the first MOS transistor source are coupled to a first voltage source. The MOS device includes a third MOS transistor having a third MOS transistor gate, the third MOS transistor gate between the first MOS transistor source and the third MOS transistor source, the third MOS transistor further having a third MOS transistor source and a third MOS transistor drain, the third MOS transistor source being coupled to the first MOS transistor source, the third MOS transistor drain being coupled to the second MOS transistor source, the third MOS transistor gate floating.

Source separated cell

Growing community of inventors

San Diego, CA, United States of America

Hananel Kang