Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Hanan Borukhov

Dmitry Vaysman

Eran Sharon

Idan Alrod

Grishma Shah

Julian Vlaiko

Leonid Minz

Yair Baram

Siddhesh Darne

Ron Tsechanski

Venky Ramachandra

Aspects of a storage device including a memory and a controller are provided, which allow for error detection or data integrity checking during data transfer of write operations and read operations. The controller may be configured to generate data integrity information based on at least one data byte to be written to the memory, and to transfer the at least one data byte contemporaneously with the data integrity information on separate data paths to the memory. The controller may be configured to select between transferring data bus inversion information or the data integrity information based on whether a data integrity protection mode is active between the memory and the controller. The memory may be configured to receive the at least one data byte and the data integrity information from the controller, and detect whether an error exists in the at least one data byte based on the data integrity information.

Toggle mode interface for data integrity protection

The present disclosure generally relates to a method and device for accessing more dies per channel in a data storage device. Each flash interface module (FIM) can have any number of bus multiplexers coupled thereto, and each bus multiplexer can have any number of memory devices coupled thereto. The bus multiplexers can be connected in series or in parallel to the FIM. The individual bus multiplexers can be addressed by a chip enable (CE) command that identifies the specific bus multiplexer as well as the specific memory device of the specific bus multiplexer. The information in the CE command allows more dies per channel without creating signal interference (SI) or limiting transmission performance.

Advanced CE encoding for bus multiplexer grid for SSD

A NOR-type three-dimensional memory device includes a vertically alternating stack of insulating layers and electrically conductive layers located over a substrate, and laterally alternating sequences of respective active region pillars and respective memory stack structures. Each laterally alternating sequence is electrically isolated from the electrically conductive layers by a respective blocking dielectric layer at each level of the electrically conductive layers. Each memory stack structures include a memory film and a semiconductor channel material portion that vertically extend through the vertically alternating stack. The active region pillars include an alternating sequence of source pillar and drain pillars.

Three-dimensional NOR-type memory device and method of making the same

Three-dimensional nor-type memory device and method of making the same

The present application is directed to systems and methods for managing data in a system for hibernation states. In one implementation, a memory device comprises a controller memory, a main memory, a buffer to the main memory and a controller comprising a processor. The processor is configured to manage data storage in conjunction with hibernation of the memory device. The processor is in communication with the controller memory, the main memory and the buffer, and is configured to read data from the controller memory; write at least a portion of the data read from the controller memory into the buffer prior to the memory device entering a hibernation state; and after writing the at least a portion of the data read from the controller memory into the buffer and prior to the memory device entering the hibernation state, reduce an amount of power provided to the buffer of the to a reduced power level.

Systems and methods for managing data in a system for hibernation states

Growing community of inventors

Rehovot, Israel

Hanan Borukhov