Intel Corporation

Hanan Bar

Tsung-Kuan Allen Chou

John Heck

Richard O Jones

Qing Ma

Quan Anh Tran

Hyundai Park

Joseph Melki

Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

Hybrid III-V silicon laser formed by direct bonding

Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.

Collapsible contact switch

An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.

Electromechanical switch with partially rigidified electrode

Briefly, in accordance with one or more embodiments, a hybrid photonics device comprises a silicon portion having one or more features formed therein, a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, and a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices.

Evanescent III-V silicon photonics device with spin coat bonding

An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

Ultra-low voltage capable zipper switch

In a Micro Electro-Mechanical System (MEMS) switch, a common switch failure is a short between the upper and the lower electrostatic actuation plates. Such shorts may occur due to torque deformation. Stopper bumps having a slightly lower height profile than that of the contact bumps are provided to prevent such shorts. The stopper bumps may be made using the same mask as that used to create the contact bump with the height of the respective bumps controlled by determining the diameter of the bumps.

MEMS switch stopper bumps with adjustable height

A microelectromechanical system switch may be formed with a protrusion defined on the substrate which makes contact with a deflectable member arranged over the substrate. The deflectable member may, for example, be a cantilevered arm or a deflectable beam. The protrusion may be formed in the substrate in one embodiment using field oxide techniques.

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Jerusalem, Israel

Hanan Bar