International Business Machines Corporation

Hanako Henry

Thomas W Dyer

Yiheng Xu

Shaoning Yao

Tze-man Ko

A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the lower antireflective coating layer; transferring a wiring pattern through the organic planarizing layer; transferring the wiring pattern through the lower antireflective coating layer; and transferring the wiring pattern through the dielectric layer, wherein unpatterned portions of the lower antireflective coating layer serve as an etch stop layer so as to prevent any bubble defects present in the organic planarizing layer from being transferred to the dielectric layer.

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Newburgh, NY, United States of America

Hanako Henry