Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Automotive Systems, Ltd.

Hanae Shimokawa

Tasao Soga

Tetsuya Nakatsuka

Toshiharu Ishida

Asao Nishimura

Hiroaki Okudaira

Koji Serizawa

Kazuma Miura

Yoshiharu Inaba

Hirokazu Nakajima

Tsuneo Endoh

Mikio Negishi

Masahide Harada

Kazuhiro Suzuki

Masahide Okamoto

Yuji Fujita

Tsuneaki Kamei

Katsuaki Saito

Masato Nakamura

Daisuke Kawase

Junji Onozuka

Atsuo Soma

Hideki Mukuno

Eiichi Morisaki

Toshihiro Hachiya

Hiroshi Yamaguchi

Tatsuya Suzuki

Kenichi Yamamoto

Hiroyoshi Matsumura

Shohei Hata

Atsushi Kazama

Kisho Ashida

Suguru Sakaguchi

Hiroshi Onuki

Yasuo Amano

Asao Nakano

Daisuke Terada

Masayuki Hio

Kentarou Miyajima

Yuji Ochiai

Takuto Yamaguchi

Mizuki Shibata

Yuuji Ochiai

Hiroyuki Oota

Shosaku Ishihara

A mechanical quantity measuring device includes: a sensor chip having a strain detector formed on a surface of a semiconductor substrate and a plurality of electrodes connected to the strain detector; a stem having ascot that protrudes from an adjacent peripheral portion and has an upper surface that is attached to a lower surface of the sensor chip by a bonding material formed from a metallic material or a glass material; a lead-out wiring part including a plurality of wires that are electrically connected to the plurality of electrodes; and a fixing part for fixing the stem, wherein: the stem and the fixing part are integrally molded or fixed through metallic bonding or mechanical bonding.

Mechanical quantity measuring device and sensor unit

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method

Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn&#x2014;Ag&#x2014;Bi alloy solder is applied to an electrode through an Sn&#x2014;Bi alloy layer. The Sn&#x2014;Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn&#x2014;Bi alloy layer thereby obtaining an enough bonding strength.

Pb-free solder-connected structure

Pb-free solder-connected structure and electronic device

Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.

Semiconductor power module

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Solder composition for electronic devices

Semiconductor power module including epoxy resin coating

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Semiconductor device with lead-free solder

A semiconductor module solder bonding of high reliability in which the heat resisting properties of the circuit substrate and electronic parts are taken into consideration. In order to achieve this, there are provided semiconductor devices each having solder bumps as external pads, and a circuit substrate bonded to the external pads of each of the semiconductor devices through a solder paste, each of the solder bumps being made of a first lead-free solder, the solder paste being made of a second lead-free solder having a melting point lower than that of the first lead-free solder.

Semiconductor device having solder bumps reliably reflow solderable

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu etc. and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Electronic device

A method of producing an electronic device by connecting a lead of a semiconductor device with an electrode of a circuit board to form a bonded structure. In the bonded structure, a lead-free Sn&#x2014;Ag&#x2014;Bi alloy solder is applied to an electrode through an Sn&#x2014;Bi alloy layer. The Sn&#x2014;Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn&#x2014;Bi alloy layer thereby obtaining an enough bonding strength.

Method of producing an electronic device having a PB free solder connection

An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0-2.0 mass %, In: 0.1-10 mass %, and Sn: remaining amount.

An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0&tilde;2.0 mass %, In: 0.1&tilde;10 mass %, and Sn: remaining amount.

Electron device and semiconductor device

Growing community of inventors

Yokohama, Japan

Hanae Shimokawa