L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Hana Ishii

Julien Gatineau

Julien Lieffrig

Christian Dussarrat

Clément Lansalot-Matras

Clement Lansalot-Matras

Jean-Marc Girard

Changhee Ko

Andreas Zauner

Mao Minoura

Nathanaelle Schneider

Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.

Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films

Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(RCp)(L), wherein each R is independently H, an alkyl group, or R'Si, with each R&#x2032; independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N-fmd) or amidinates (NR&#x2033;-amd).

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.

Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films

Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.

Vapor deposition of chalcogenide-containing films

Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films

Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films.

Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition

Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20&#xb0; C. to approximately 100&#xb0; C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Tellurium precursors for film deposition

Disclosed are GeXLmolecules, with X being a halide, L being an adduct other than CHO, and 0.5&#x2266;n&#x2266;2. These molecules have lower melting points and/or increased volatility compared to GeCl-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeOfilms.

Growing community of inventors

Tsukuba, Japan

Hana Ishii