Samsung Electronics Co., Ltd.

Hana Choi

Munhwan Kim

Youngsun Oh

Jongyoon Shin

Honghyun Jeon

Yujung Choi

Jooyeong Gong

An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

Image sensor and method of operating the same

An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.

Image sensor including pixels mirror symmetric with each other

Growing community of inventors

Seongnam-si, South Korea

Hana Choi