Globalfoundries Inc.

Han You

Shariq Siddiqui

Christopher J Penny

Xunyuan Zhang

Roger Allan Quon

Frank Wilhelm Mont

Brown Cornelius Peethala

Rohit Galatage

One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Methods of mitigating cobalt diffusion in contact structures and the resulting devices

The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

Metal insulator metal capacitor devices

Growing community of inventors

Cohoes, NY, United States of America

Han You