Tsinghua University

Taiwan Semiconductor Manufacturing Comp. Ltd.

Han-Yi Chen

Tzu-Yin Liu

Tri-Rung Yew

Yu-Hsuan Hung

Fang-Yi Lin

Huan-Chieh Su

Hsiang-Ku Shen

Chih-Hung Lu

Chia-Hsiang Chen

Wen-Tung Chen

Ying-Chan Hung

Hsiang-Yu Tsai

Kuo-Liang Liu

Jian-Ming Huang

Ecko Lu

Yao-Yu Lin

Chung-Sheng Ni

Chia-Chieh Hsu

Peng-Hsuan Chiang

Shih-Fu Liu

Yu-Ying Chu

A biofuel cell includes a cathode, an anode, and a microbial community. At least one of the anode and the cathode contains a biochar prepared from ahusk as an electrode material, and the anode is located in the microbial community. By using the biochar prepared from thehusk as the electrode material, not only can the power density of the biofuel cell be increased, but the economic benefits of waste recycling can also be achieved.

Biofuel cell

A microbial fuel cell and a method of manufacturing the same are provided. The microbial fuel cell includes a cathode, an anode, and a microbial community. The anode is made of an activated carbon prepared from waste coffee ground as an electrode material, and the microbial community is adhered to the surface of the activated carbon. Since the activated carbon prepared from waste coffee ground is beneficial for the adhesion of various microbial communities to form a biofilm, the electron transfer efficiency of the microbial fuel cell may be improved.

Microbial fuel cell with activated carbon anode derived from waste coffee ground and method of manufacturing the same

Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.

Process for forming metal-insulator-metal structures

A self-power air refresher system includes an air refresher apparatus and a plant microbial fuel cell (PMFC). The air refresher apparatus includes a fan, a filter located on an air-outlet path of the fan, and an energy storage device connected to the fan. The PMFC is disposed on the air-outlet path and includes soil contained in a container, a plant planted in the soil, and a first and second electrodes. The interaction between roots of the plant and microorganisms near the roots generates electrons, and the electrons are transmitted to the energy storage device through the first and second electrodes installed in the soil so as to enable the energy storage device to supply power to the fan. The air that has passed through the filter enters the soil of the PMFC, and is filtered by the plant and then discharged from the container.

Self-power air refresher system

An electrode material for a secondary battery and a secondary battery are provided. The electrode material for the secondary battery includes tin-manganese-nickel-oxide. The secondary battery includes a cathode, an anode, an electrolyte, and a package structure, wherein the anode includes the electrode material for the secondary battery.

Electrode material for secondary battery and secondary battery

A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium

Growing community of inventors

Hsinchu, Taiwan

Han-Yi Chen