Industry-university Cooperation Foundation Hanyang University

Soongsil University

Han Wool Park

Do Hwan Kim

Hojin Lee

Moon Sung Kang

Ji Hye Shin

Keun-Yeong Choi

Haejung Hwang

Disclosed are an organic semiconductor compound that exhibits chemical resistance and etch resistance while maintaining electrical characteristics and thus is applicable to an existing photolithography process, thereby increasing process efficiency, and an organic semiconductor device using the same.

Compound of organic semiconductor and organic semiconductor device using the same

According to embodiments of the present invention, a method of manufacturing an organic semiconductor device includes forming a first organic semiconductor layer on a substrate, and forming a self-assembled monolayer by providing a self-assembly precursor onto the first organic semiconductor layer. The first organic semiconductor layer has a reactive group on a top surface of the first organic semiconductor layer. The forming of the self-assembled monolayer includes forming a chemical bond between the self-assembly precursor and the reactive group of the first organic semiconductor layer.

Method of manufacturing organic semiconductor device

An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.

Organic semiconductor compound and method for manufacturing the same

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Seoul, South Korea

Han Wool Park