Asm IP Holding B.v.

Han Wang

Jan Willem Maes

Qi Xie

Delphine Longrie

Chiyu Zhu

David Kurt De Roest

Timo Asikainen

Julian Hsieh

Antti Niskanen

Dai Ishikawa

Kunitoshi Namba

Shang Chen

Takahiro Onuma

Toshiharu Watarai

Krzysztof Kachel

Harald Profijt

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

Selective deposition of aluminum and nitrogen containing material

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Reaction chamber passivation and selective deposition of metallic films

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Leuven, Belgium

Han Wang