Au Optronics Corporation

Han-Tu Lin

Kuo-Lung Fang

Wen-Ching Tsai

Feng-Yuan Gan

Chih-Chun Yang

Chih-Hung Shih

Ta-Wen Liao

Ming-Yuan Huang

Kuo-Yuan Tu

Shiun-Chang Jan

Chien-Hung Chen

Jia-Fam Wong

Chia-Sheng Lee

Hsiang-Lin Lin

Chia-Chi Tsai

Yeong-Shyang Lee

Chun-Chieh Tsao

Wei-Sheng Yu

Shine-Kai Tseng

Ya-Hui Peng

Yi-Ya Tseng

Kun-Fu Huang

Chih-Hsien Chen

Hsien-Chieh Tseng

Han-Chung Lai

Kuo-Yu Huang

Chin-Yueh Liao

Han-Tang Chou

Ming-Jeng Huang

Hsin-Ming Liao

Kuang-Ting Chou

The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.

Photovoltaic device with double-junction

A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns.

Method of forming thin film solar cell and structure thereof

A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.

Semiconductor structures

A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive layer and a first metal layer are orderly formed on the substrate. A conductive stack layer is formed within each of the TFT/pixel/gate-line regions and the end of the data-line region. Next, a first insulating layer and a semiconductor layer are orderly formed, and a patterned first insulating layer and a patterned semiconductor layer are formed above the conductive stack layer within the TFT region. Then, a second metal layer and a first photoresist layer are respectively formed. Afterwards, the second and the first metal layers are patterned by using the first photoresist layer as a photomask. Finally, the first photoresist layer is reflowed by heat, and part of the reflowed first photoresist layer covers a channel formed within the TFT region.

Display device and method of manufacturing the same

A method of manufacturing a color filter substrate is provided. The color filter substrate includes a substrate, a light-shielding layer, and a plurality of color filter patterns. The substrate has a plurality of annular trough areas, a plurality of central areas, and a light-shielding area positioned among the annular trough areas. Each of the annular trough areas has an inner edge connected to the central area and an outer edge connected to the light-shielding area. The light-shielding layer is disposed on the light-shielding area and extends from the outer edges of the annular trough areas to the top of the annular trough areas. The color filter patterns are disposed on the annular trough areas and the central areas, and the color filter patterns are in contact with a side surface and a part of the bottom surface of the light-shielding layer.

Color filter substrate, electronic apparatus and manufacturing method thereof

A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern.

Method for fabricating thin film transistor array substrate

A color filter substrate is provided. The color filter substrate includes a substrate, a light-shielding layer, and a plurality of color filter patterns. The substrate has a plurality of annular trough areas, a plurality of central areas, and a light-shielding area positioned among the annular trough areas. Each of the annular trough areas has an inner edge connected to the central area and an outer edge connected to the light-shielding area. The light-shielding layer is disposed on the light-shielding area and extends from the outer edges of the annular trough areas to the top of the annular trough areas. The color filter patterns are disposed on the annular trough areas and the central areas, and the color filter patterns are in contact with a side surface and a part of the bottom surface of the light-shielding layer.

A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Copper conducting wire structure and fabricating method thereof

A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 10atoms/cmand 10atoms/cm. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Bottom-gate thin film transistor and method of fabricating the same

An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate.

Active device array substrate and method for fabricating the same

A method for manufacturing a pixel structure is provided. First, a first mask process is performed to form a patterned first metal layer on a substrate, wherein the patterned first metal layer includes a gate. Next, a second mask process is performed to form a patterned insulating layer and a patterned semiconductor layer over the gate, wherein the patterned insulating layer is disposed on the patterned first metal layer, and the patterned semiconductor layer is disposed on the patterned insulating layer. Then, a third mask process is performed to define a thin film transistor (TFT) and a pixel electrode connected thereto and to form a passivation layer to cover the TFT.

Pixel structure and method for manufacturing the same

A fabrication method of a pixel structure includes utilizing only a single photomask in two different lithographic processes for defining patterns of the source/drain and passivation layer respectively. Therefore, the total amount of photomasks of the fabrication process can be decreased.

Fabrication method of pixel structure

A pixel structure is disposed on a substrate and electrically connected to a scan line and a data line. The pixel structure including an active device, a bottom capacitor electrode, an insulator, and a pixel electrode is provided. The active device is disposed on the substrate and has a gate, a source and a drain. Besides, the active device is electrically connected to the scan line and the data line. The bottom capacitor electrode and the gate are separately disposed on the substrate. The insulator covering the active device and the bottom capacitor electrode is made of a mono film. The pixel electrode is electrically connected to the active device, and at least a part of the pixel electrode extends to the insulator above the bottom capacitor electrode.

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Taichung County, Taiwan

Han-Tu Lin