United Microelectronics Corp.

Han-Ting Yen

Neng-Hui Yang

Chun-Yao Yang

Shi-You Liu

Ming-Shiou Hsieh

Rong-Sin Lin

Yi-Wei Chen

Yu-Shu Lin

Tsai-Yu Wen

Ching-I Li

I-Cheng Hu

A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Manufacturing method of semiconductor device

A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.

Method for manufacturing fins

Semiconductor device and manufacturing method thereof

Growing community of inventors

Yunlin County, Taiwan

Han-Ting Yen