Taiwan Semiconductor Manufacturing Comp. Ltd.

Han-Tang Lo

Chen-Hsuan Yen

S L Chen

Tsung-Hsien Lee

Shih-Chi Kuo

Tsai-Hao Hung

Chun-Yen Ho

A semiconductor structure is disclosed. In one example, the semiconductor structure includes: a device region having at least one semiconductor device; a dummy region in contact with the device region; and at least one thermal conductor embedded in the dummy region.

Structures and methods for heat dissipation of semiconductor devices

The present disclosure relates to a method of forming a masking structure having a trench with a high aspect ratio, and an associated structure. In some embodiments, the method is performed by forming a first material over a substrate. The first material is selectively etched and a second material is formed onto the substrate at a position abutting sidewalls of the first material, resulting in a pillar of sacrificial material surrounded by a masking material. The pillar of sacrificial material is removed, resulting in a masking layer having a trench that extends into the masking material. Using the pillar of sacrificial material during formation of the trench allows the trench to have a high aspect ratio. For example, the sacrificial material allows for a plurality of masking layers to be iteratively formed to have laterally aligned openings that collectively form a trench extending through the masking layers.

Multi-layer structure for high aspect ratio etch

A defect inspection apparatus is disclosed that includes a stage, a photosensitive element, and a controller. The stage can support a semiconductor element that has a plurality of complete dies and partial dies surrounding the complete dies. The photosensitive element is located above the stage. The controller is electrically connected to the photosensitive element to drive the photosensitive element to inspect the defects of the complete dies and the partial dies.

Growing community of inventors

Hsinchu, Taiwan

Han-Tang Lo