Au Optronics Corporation

Han-Tang Chou

Chia-Ming Chang

Ta-Wen Liao

Hsiang-Chih Hsiao

Chun-Yi Chiang

Zong-Long Jhang

Che-Yung Lai

Chou-Huan Yu

Chen-Pang Tung

Jun-Kai Chang

Chia-Chi Tsai

Han-Tu Lin

Ming-Yuan Huang

Kuang-Ting Chou

A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns.

Method of forming thin film solar cell and structure thereof

A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.

Method for fabricating pixel structure

A pixel structure fabricating method is provided. A gate and a gate insulation layer covering the gate are formed on a substrate. A channel layer is formed on the gate insulation layer. A conductive layer is formed on the channel layer and gate insulation layer. A black matrix having a color filer layer accommodating opening is formed on the conductive layer. The black matrix includes a first block and a second block which is thicker than the first block. The conductive layer is patterned with the black matrix as a mask to form a source and a drain on the channel layer. A color filter layer is formed within the color filter layer accommodating opening through inkjet printing. A dielectric layer is formed on the black matrix and color filter layer. The dielectric layer is patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.

A fabricating method for a pixel structure including following procedures is provided. First, a gate and a gate insulator layer are formed sequentially on a substrate. Next, a semiconductor layer, a conductive layer and a photosensitive black matrix having a color filter containing opening are sequentially formed on the gate insulator layer. The photosensitive black matrix includes a first portion and a second portion. A thickness of the first portion is smaller than that of the second portion. A channel, a source and a drain are formed simultaneously using the photosensitive black matrix as a mask. A passivation is formed on the substrate, and a color filer layer is formed within the color filter containing opening via an inkjet printing process and a dielectric layer is formed thereon. Next, a patterning process is applied to expose the drain. Ultimately, a pixel electrode connected to the drain is formed.

Growing community of inventors

Taoyuan County, Taiwan

Han-Tang Chou