Samsung Electronics Co., Ltd.

Han-sung Joo

Ki-sung Kim

Seung-You Baek

Jae-Wook Lee

A memory controller may detect degradation in accordance with a bit error rate (BER) of the resistive memory device including memory cells. The memory controller may control the memory cells to be programmed to a first resistance state, read the programmed memory cells, and receive the BER of the memory cells generated during a read operation from the resistive memory device. The memory controller may determine a quantity of program cycles of the memory cells based on the BER. The quantity may be determined based on reference to a lookup table indicating a correlation between the BER and the quantity of program cycles.

Methods and systems for detecting degradation of resistive memory devices

A memory controller may control a resistive memory device including memory cells may control the resistive memory device to program the memory cells into a first resistance state, control the resistive memory device to read data from the memory cells that are programmed, receive bit error rates (BER) of the memory cells, occurring in a read operation, from the resistive memory device, may determine the number of program operations on the memory cells corresponding to the BER and may, based on the number of program operations that is determined, control the memory cells to be programmed into the first resistance state by using a write current having a current level higher than that of a minimum write current required for the memory cells to be changed into the first resistance state.

Methods and systems for compensating for degradation of resistive memory device

A semiconductor memory device and a sense amplifier thereof are provided. The semiconductor memory device includes a memory cell array and a plurality of sense amplifiers. The memory cell array includes a memory cell array block having a plurality of memory cells. Each of the plurality of sense amplifiers is configured to apply, based on a restore signal, a first voltage to a corresponding bit line to restore a first data value in a selected memory cell of the plurality of memory cells if a read value in the selected memory cell is the first data value and apply a second voltage based on the restore signal to the corresponding bit line to prevent a second data value from being restored in the selected memory cell if the read value in the selected memory cell is the second data value.

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Seoul, South Korea

Han-sung Joo