Samsung Electronics Co., Ltd.

Hyundai Motor Company

Lg Chem, Ltd

Samsung Sdi Co., Inc.

Coway Co., Ltd

Han-soo Kim

Dae-hyun Kim

Yeo-ri Yoon

Sung-Min Hwang

Soon-Moon Jung

Sung-Hoi Hur

Jae-Hun Jeong

Jae-hoon Jang

Kwang-Shik Shin

Ji-bum Moon

Oh-jae Kwon

Chang-Soo Lee

Kyung-Tae Kim

Seung-hoon Han

Woon-Kyung Lee

Jin-Sung Kim

Jung-Hwan Lee

Jong-Min Kim

Sung-Hyun Kim

Jun-Beom Park

Jong-In Yun

Jae-Joo Shim

Hoo-Sung Cho

Hong-Soo Kim

Won-seok Cho

Ju-Young Lim

Raisa Kharbash

Kun-Ho Kwak

Won-seok Ahn

Kyung-Jun Kim

Byung-Jun Hwang

Young-Hoon Hong

Kyeong-tae Kim

Young-wook Sohn

Min-Young Lim

Gyeong-Min Lee

Sung-Bok Lee

Jhang-rae Kim

Hyun-Seok Moon

Kyu-Jun Kim

Chang-Ho Cho

Keon-Woo Lee

Kwang-Ok Koh

Dong-Min Oh

Dong-Kung Oh

Dong-Min Im

Geun-Young Cha

Dong-Chang Choi

Seo-young Kim

Mi-So Hwang

Hee-Kwan Park

Il-Eok Kwon

Jong-Hyun Park

Xiang-Li Li

Hyo-Sug 802-1405 Doosan Apt Lee

Myung-Dong Cho

A display apparatus is provided. The display apparatus includes a display configured to display a user interface window for receiving a letter input; a communication interface configured to receive a control instruction for inputting letters from a control device; and a controller configured to control the display to selectively display an on-screen keypad for inputting letters on the user interface window based on whether the control device includes letter keys for inputting letters.

Display apparatus, method for UI display thereof and computer-readable recording medium

Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device

A display apparatus which corrects input characters by moving a cursor in word units is provided. The display apparatus includes a communication interface configured to receive a control command for a character input from a control device, a display configured to display characters corresponding to the control command, and a controller configured to control the display to move a cursor in word units when a correction command to correct the displayed characters is received.

Display apparatus, UI display method thereof and computer-readable recording medium

Provided is a semiconductor device that includes first and second isolation patterns disposed on a substrate. Alternately stacked interlayer insulating patterns and a conductive patterns are disposed on a surface of the substrate between the first and second isolation patterns. A support pattern penetrates the conductive patterns and the interlayer insulating patterns and has a smaller width than the first and second isolation patterns. First and second vertical structures are disposed between the first isolation and the support pattern and penetrate the conductive patterns and the interlayer insulating patterns. A second vertical structure is disposed between the second isolation pattern and the support pattern and penetrates the conductive patterns and the interlayer insulating patterns. A distance between top and bottom surfaces of the support pattern is greater than a distance between a bottom surface of the support pattern and the surface of the substrate.

Semiconductor device with vertical structures that penetrate conductive patterns and interlayer insulating patterns

A method and apparatus for converting two-dimensional (2D) contents into three-dimensional (3D) contents is disclosed. The method including: displaying a frame, the frame containing an object which will be extracted from among plural frames contained in the 2D contents; designating a boundary region of an object to be extracted on the displayed frame, in accordance with a user command through a user interface (UI) for collectively designating a region; generating a trimap based on the designated boundary region including inner and outer regions of the object to be extracted, and extracting the object based on the generated trimap. With this, a user can more conveniently and efficiently convert 2D contents into 3D contents.

Method and apparatus for converting 2D content into 3D content

An apparatus for generating depth information includes: a receiver which receives a two-dimensional (2D) image signal including a plurality of frames; a user input unit; a user interface (UI) generator which generates a tool UI to input guide information for generating depth information; a display unit which displays a frame for which depth information is generated among the plurality of frames, and the generated tool UI; and a depth information generator which generates depth information corresponding to the guide information input by the user input unit through the tool UI.

Apparatus and method for generating depth information

One embodiment exemplarily described herein can be generally characterized as a semiconductor device that includes a lower level device layer located over a semiconductor substrate, an interlayer insulating film located over the lower level device layer and an upper level device layer located over the interlayer insulating film. The lower level device layer may include a plurality of devices formed in the substrate. The upper level device layer may include a plurality of semiconductor patterns and at least one device formed in each of the plurality of semiconductor patterns. The plurality of semiconductor patterns may be electrically isolated from each other. Each of the plurality of semiconductor patterns may include at least one active portion and at least one body contact portion electrically connected to the at least one active portion.

Semiconductor device having driving transistors

A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate.

Stack-type semiconductor device

An EEPROM includes a device isolation layer for defining a plurality of active regions, a pair of control gates extending across the active regions and a pair of selection gates patterns that extend across the active regions and are interposed between the control gate patterns. A floating gate pattern is formed on intersection regions where the control gate patterns extend across the active regions. A lower gate pattern is formed on intersection regions where the selection gate patterns extend across the active regions. An inter-gate dielectric pattern is disposed between the control gate pattern and the floating gate pattern and a dummy dielectric pattern is disposed between the selection gate pattern and the lower gate pattern. The dummy dielectric pattern is substantially parallel to the selection gate pattern, and self-aligned with one sidewall of the selection gate pattern to overlap a predetermine width of the selection gate pattern.

EEPROM device having selecting transistors and method of fabricating the same

Methods of forming a semiconductor device are provided by forming a gate pattern that includes a gate electrode on a substrate. Lightly doped impurity diffusion layers are formed in the substrate at both sides of the gate pattern. Spacers are formed on sidewalls of the gate pattern. The spacers having a bottom width. Impurity ions are implanted using the gate pattern and the spacer as a mask to form a heavily doped impurity diffusion layer in the substrate. The spacers are removed. A conformal etch stop layer is formed on the gate pattern and the substrate. The etch stop layer is formed to a thickness of at least the bottom width of the spacers.

Methods of forming semiconductor devices using an etch stop layer

An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Methods of forming integrated circuit devices having a resistor pattern and plug pattern that are made from a same material

Growing community of inventors

Gyeonggi-do, South Korea

Han-soo Kim