Samsung Electronics Co., Ltd.

Lg Chem, Ltd

Samsung Sdi Co., Inc.

Daewoo Electronics Co., Ltd.

Fairchild Korea Semiconductor Ltd.

Coway Co., Ltd

Scientec Lab Center Co., Ltd.

Han-Soo Kim

Jae-Hoon Jang

Won-Seok Cho

Sung-Min Hwang

Jae-Hun Jeong

Sun-Il Shim

Soon-Moon Jung

Ki-Hyun Kim

Ji-Heum Yoo

Min-Young Lim

Yoon-Hee Heo

Sung-Hyun Kim

Woon-Kyung Lee

Min-Sung Song

Dae-Hyun Kim

Yong In Park

Wonseok Cho

Min-Koo Han

Young-Chul Jang

Mi-Kyoung Kim

Jonghyuk Kim

Yearn-Ik Choi

Kyung-Soo Choi

Jang Young Chul

Dong-won Ok

Jae-oh Park

Ji-eun Byun

Sun-Hwa Kim

YoungSeop Rah

Yong Jong Park

Jae-Hyung Kim

Sang-Yong Park

Jung-Hwan Lee

Jong-Min Kim

Young-kyu Jin

Hee-Seon Park

Seung-Hee Lee

Jae-Joo Shim

Byeong-In Choe

Jong-Hyuk Kim

Hoo-Sung Cho

Seung-eok Choi

Jin-Soo Lim

Ju-Young Lim

Hyo-sug Lee

Gyu-Chul Kim

Young-Hoon Hong

Jin-Man Han

Jun-Beom Park

Yang-Soo Son

Gyeong-Min Lee

Kyu-Jun Kim

Ji-Sun Kim

Hui-Chang Moon

Hyun-Seok Moon

Kang-Sik Cho

Min-A Yu

Dong-Min Oh

Young-Seop Rah

Ik-Jae Lee

Jong-In Yun

Dong-Chang Choi

Ho-Chan Ji

Geun-Young Cha

Jae-Joon Kim

Mi-Ae Kim

Dew-ill Chung

Jae-il Han

Mun-Ho Kim

Hyu-ju Kim

Hoo-Seung Cho

Seong-Dong Kim

Chang-Ik Kang

Sun-Tae Kim

Kwang-Han Park

Yeo-Ri Yoon

Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device

An ice storage includes a storage body having a storage space for storing ice and a discharge port for discharging ice to the outside, a transferring and breaking part which, by having at least a part thereof provided in the storage space, transfers the ice in the storage space to the discharge port, and if necessary, breaks the transferred ice, and a door part allowing the ice to be discharged through the discharge port as unbroken ice or broken ice unbroken or broken up by the transferring and breaking part. The transferring and breaking part includes a transferring member for transferring ice and a breaking member for breaking ice, and the transferring member and the breaking member are configured such that ice is not stuck therebetween while being transferred.

Ice storage

An image display device includes: a processor; a memory configured to store channel information corresponding to at least one channel; and at least one program which is stored in the memory and executed by the processor. The program may include instructions for controlling a display so as to move a channel indicator in a first or second direction on a channel scroll bar and to display channel information of a channel corresponding to a point at which the channel indicator is located, in response to a first input of pressing a channel-up or channel-down key for a long time, and for switching a current channel to the channel corresponding to the point at which the channel indicator is located and displaying an image corresponding to the switched channel, in response to a second input of releasing the channel-up or channel-down key.

Image display device and operating method thereof

Method for displaying a channel scroll bar and a channel indicator when a channel-up or channel-down button is continuously pressed and for tuning to the highlighted channel at the time the button is released

A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.

Vertical non-volatile memory device and method of fabricating the same

Vertical non-volatile memory device including plural word line stacks

A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Non-volatile memory device having vertical structure and method of operating the same

A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, a plurality of memory cell strings that vertically extend on the substrate along sidewalls of the semiconductor regions and include a plurality of memory cells and at least one or more first selection transistors, which are disposed on sides of the memory cells and are adjacent to one another. A plurality of wordlines is connected to the memory cells of the memory cell strings. A first selection line is connected to the selection transistors of the memory cell strings and insulating regions are formed as air gaps between the first selection transistors of the adjacent memory cell strings.

Vertical structure non-volatile memory device having insulating regions that are formed as air gaps

The present invention relates to an inkjet composition for forming transparent films, which is highly economical and environmentally friendly and has excellent physical properties, including excellent transmittance, chemical resistance, heat resistance, adhesion, jetting stability and storage stability.

Inkjet composition for forming transparent film and preparation method thereof

A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer disposed between the semiconductor region and the plurality of gate electrodes; a substrate contact electrode extending vertically from the impurity-doped second region of the substrate; and an insulating region formed as an air gap between the substrate contact electrode and at least one of the plurality of gate electrodes.

Vertical structure semiconductor memory devices and methods of manufacturing the same

A vertical type semiconductor device includes first and second word line structures that include first and second word lines. The word lines surround a plurality of pillar structures, which are provided to connect the word lines to corresponding string select lines. Connecting patterns electrically connect pairs of adjacent first and second word lines in a same plane. The device may be a nonvolatile memory device or a different type of device.

Vertical type semiconductor devices

A method of manufacturing a vertical type memory device includes stacking a first lower insulating layer, one layer of a lower sacrificial layer and a second lower insulating layer on a substrate, forming a stacking structure by stacking sacrificial layers and insulating layers, and etching an edge portion of the stacking structure to form a preliminary stepped shape pattern structure. The preliminary stepped shape pattern structure has a stepped shape edge portion. A pillar structure making contact with a surface of the substrate is formed. The preliminary stepped shape pattern structure, the lower sacrificial layer, and the first and second lower insulating layers are partially etched to form a first opening portion and a second opening portion to form a stepped shape pattern structure. The second opening portion cuts at least an edge portion of the lower sacrificial layer.

Methods of manufacturing a semiconductor device

Growing community of inventors

Suwon-si, South Korea

Han-Soo Kim