Cheil Industries Inc.

Samsung Sdi Co., Inc.

Cheil Industry, Inc.

Han-Song Lee

Taek-Soo Kwak

Eun-Su Park

Jin-Hee Bae

Kwen-Woo Han

Yoong-Hee Na

Sang-Kyun Kim

Hyun-Ji Song

Seung-Hee Hong

Bo-Sun Kim

Byeong-Gyu Hwang

Wan-Hee Lim

Jin-Woo Seo

Go-Un Kim

Youn-Jin Cho

Jun-Young Jang

Hui-Chan Yun

Sang-Hak Lim

Sae-Mi Park

Mi-young Kim

Mi-Young Kim

Bong-Hwan Kim

Woo-Jin Lee

Woo-Han Kim

Jong-Seob Kim

Sun-Hae Kang

Jin-Wook Lee

Jong-Dae Jeon

A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25&#xb0; C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Composition for forming a silica based layer, silica based layer, and electronic device

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 &#x3bc;m to about 1 &#x3bc;m is less than or equal to about 10/ml.

Composition for forming silica based layer, and method for manufacturing silica based layer

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: 

Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2:(R)SiXSi(R)&#x2003;&#x2003;[Chemical Formula 1]R(Si)OR.&#x2003;&#x2003;[Chemical Formula 2]

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

A resist underlayer composition includes a solvent, and an organosilane condensation polymerization product of: a compound represented by the following Chemical Formula 1, a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3,[RO]Si&#x2014;X&#x2003;&#x2003;[Chemical Formula 1][RO]Si&#x2014;R&#x2003;&#x2003;[Chemical Formula 2][RO]Si&#x2014;Si[OR].&#x2003;&#x2003;[Chemical Formula 3]

Resist underlayer composition and process of producing integrated circuit devices using the same

A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.

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Uiwang-si, South Korea

Han-Song Lee