Samsung Electronics Co., Ltd.

Han-shin Shin

Jun Jin Kong

Eun Chu Oh

Hong-Rak Son

Moon-Sang Kwon

Eun-chu Oh

Min-su Kim

Yeong-Jae Woo

Kyoung-Il Bang

Young-Geon Yoo

Sung-yong Seo

Yong-seok Lee

A method of manufacturing an IC includes detecting connectivity between polygons from layout data of the IC and extracting a layout netlist, by performing a DRC on the layout data. The DRC includes loading a rule file including a DRC syntax. The method includes performing LVS verification on the extracted layout netlist and schematic data of the IC to generate LVS result data. The method includes manufacturing the IC according to a layout based on the layout data and the LVS result data.

Method for designing an integrated circuit, and method of manufacturing the integrated circuit

A memory device capable of performing an overwrite operation, a memory system, and a method of operating the memory system are provided. The method includes receiving one or more write requests, a logical address and data corresponding to the one or more write requests; comparing a result of analyzing at least one of the received one or more write requests, logical address, and data with a threshold value; and writing data using a first update method or a second update method, based on a result of the comparison. When the first update method is selected, the data are written in a region indicated by a physical address corresponding to the logical address according to address mapping information. When the second update method is selected, information of the physical address corresponding to the logical address is changed, and the data are written in a region indicated by the changed physical address.

Memory system, including memory device capable of overwrite operation, and method of operating the memory system

A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.

Resistive memory device, resistive memory system, and method of operating the resistive memory system

Growing community of inventors

Yongin-si, South Korea

Han-shin Shin