Samsung Electronics Co., Ltd.

Han Shin Shin

Jun Jin Kong

Hong Rak Son

Dong Won Kim

Yong In Park

Eun Chu Oh

Kwan Hee Lee

Pil Sang Yoon

Nam Wook Kang

Seoung Jae Yoo

Young Bae Kim

Byung Ki Moon

Jong Hyuk Woo

Sang Shik Park

A method and apparatus provides a service based on biometric information. A bioelectrical impedance of a user is measured at a first time point to obtain a first value representing biometric information of the user. At least one processor predicts the biometric information of the user at a third time point subsequent to the first time point to obtain a third value, based on the first value representing biometric information of the user at the first time point and a second value representing the biometric information at a second time point prior to the first time point. The processor calculates a difference between a fourth value representing a target related to the biometric information of the user, input by the user in advance, and the third value. Information regarding a health management service is output based on the difference between the fourth value and the third value.

Method of providing service based on biometric information and wearable electronic device

A storage device is provided. The storage device includes storage clusters, and a controller. The controller receives a command and an address from an external host device, selects a storage cluster according to the received address, and transmits the received command and the received address to the selected storage cluster. The controller controls the storage clusters as normal storage clusters and slow storage clusters according to a temperature of a zone to which the storage clusters belong.

Storage device

A resistive memory system having a plurality of memory cells includes a memory device having a resistive memory cell array and a controller. The controller generates write data to be written to the memory cell array by encoding input data such that the input data corresponds to an erase state and a plurality of programming states that a memory cell may have. The input data is encoded such that at least one of the number of memory cells assigned a first programming state and the number of memory cells assigned a second programming state is smaller than at least one of the numbers of memory cells in the erase state and the other programming states. The first programming state has a highest resistance level among the plurality of programming states, and the second programming state has a second highest resistance level among the plurality of programming states.

Resistive memory system and method of operating the resistive memory system

Growing community of inventors

Yongin-si, South Korea

Han Shin Shin