Magnachip Semiconductor, Inc.

Intellectual Ventures II LLC

Crosstek Capital, LLC

Han-Seob Cha

An epitaxial silicon wafer includes a bulk wafer having a first doping concentration, a first epitaxial layer formed over the bulk wafer, the first epitaxial layer having a second doping concentration which is higher than the first doping concentration, and a second epitaxial layer formed over the first epitaxial layer, the second epitaxial layer having a third doping concentration which is lower than the second doping concentration.

Epitaxial silicon wafer and method for fabricating the same

A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

Apparatus with photodiode region in multiple epitaxial layers

A method for forming a triple gate of a semiconductor device is provided. The method includes: forming a buffer layer and a hard mask over a substrate; etching the hard mask and the buffer layer to form a hard mask pattern and a buffer pattern; forming first and second trenches spaced apart within the substrate by partially etching the substrate by a vapor etching process using the hard mask pattern as an etching barrier layer; forming a buried insulation layer to fill the first and second trenches; removing the hard mask pattern and the buffer pattern; forming a gate insulation layer over the substrate between the first trench and the second trench; forming a conductive layer to cover the gate insulation layer; and etching the conductive layer to form a gate electrode.

Method for forming gate of semiconductor device

A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.

Method for fabricating CMOS image sensor with plasma damage-free photodiode

Image sensor and method for fabricating the same

An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the trench and being a part of the photodiode, and a first conductivity type second epitaxial layer formed over the second conductivity type first epitaxial layer.

Method for fabricating image sensor

A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes performing an ion implantation process onto a photodiode region in a first conductivity type semiconductor layer to form a second conductivity type first impurity region, and performing an annealing process in a gas atmosphere including first conductivity type impurity atoms to form a first conductivity type second impurity region underneath a surface of the first conductivity type semiconductor layer in the second conductivity type first impurity region, wherein the first conductivity type second impurity region is doped with the diffused first conductivity impurity atoms.

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Chungcheongbuk-do, South Korea

Han-Seob Cha