Hyundai Electronics Industries Co. Ltd.

Han S Yoon

Sang Yong Kim

Bong K Joo

Dae S Jung

Jae Wha Kim

In S Chung

Jae C Om

Jin H Kim

A MOSFET having a nonuniform doping channel and a method for fabricating the same. The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and its surroundings, the gate electrode having a portion longer than any other portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.

Transistor having a nonuniform doping channel

An MOSFET having a nonuniform doping channel and a method for fabricating the same. The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and surroundings, the gate electrode having a portion longer than any other than portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.

Transistor having a nonuniform doping channel and method for fabricating

A DRAM cell having a SDTAS structure having a trench stacked capacitor which includes a capacitor charge storage electrode which is in physical contact and is electrically connected to a N+ drain region, and a VCC/2 electrode which is electrically isolated by an ONO layer formed between the capacitor charge storage electrode and the VCC/2 electrode is disclosed. Such cell can increase the capacitance of the capacitor and reduce the area of the cell by reducing the width of the MOSFET, and a method for manufacturing such cell.

Method of making DRAM having a side wall doped trench and stacked

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Kyungki, South Korea

Han S Yoon