Taiwan Semiconductor Manufacturing Comp. Ltd.

Han-Hsun Chang

Chia-Chu Liu

Yi-Shien Mor

Yu Lun Liu

Shiao-Chian Yeh

Kuei-Shun Chen

Kuei Shun Chen

A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having a second width defined along the reference plane, and the first supporting member and the second supporting member being separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region being from 5 to 30 times the second width.

Method of making a structure

A structure includes a substrate, a first supporting member over the substrate, a second supporting member over the substrate, and a layer of material over the substrate and covering the first supporting member and the second supporting member. The first supporting member has a first width, and the second supporting member has a second width. The first supporting member and the second supporting member are separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region ranges from 5 to 30 times the second width.

Semiconductors structure with elements having different widths and methods of making the same

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Hsinchu, Taiwan

Han-Hsun Chang