Lumileds LLC

Koninklijke Philips Corporation N.V.

Han Ho Choi

Oleg Borisovich Shchekin

Kenneth John Vampola

Peter Josef Schmidt

April Dawn Schricker

Mark Melvin Butterworth

Paul Scott Martin

Nathan Fredrick Gardner

Michael David Camras

Daniel Alexander Steigerwald

Grigoriy Basin

Jerome Chandra Bhat

A multi-stage lamination process is used to laminate a wavelength conversion film to a transparent substrate, and subsequently to a light emitting element. The wavelength conversion film may be an uncured phosphor-embedded silicone polymer, and the lamination process includes heating the polymer so that it adheres to the transparent substrate, but is not fully cured. The phosphor-laminated transparent substrate is sliced/diced and the wavelength conversion film of each diced substrate is placed upon each light emitting element. The semi-cured wavelength conversion film is then laminated to the light emitting element via heating, consequently curing the phosphor film. Throughout the process, no glue is used, and the optical losses associated with glue material are not introduced.

Glueless light emitting device with phosphor converter

Light emitting devices are described herein. A light-emitting device includes a substrate having a surface below an optical cavity, one or more light emitting diodes (LEDs) disposed above the surface of the substrate, a first wavelength-converting layer, and a second wavelength-converting layer. The first wavelength-converting layer is disposed on the surface of the substrate below the optical cavity, covers the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and has a thickness that is equal to or less than a thickness of at least one of the one or more LEDs. The second wavelength-converting layer is disposed above the optical cavity.

Optical cavity including a light emitting device and wavelength converting material

In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Wavelength converted semiconductor light emitting device

Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

Light emitting device with wavelength converting side coat

A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Method of processing a semiconductor structure

Embodiments of the invention include a semiconductor light emitting diode attached to a substrate. A first region of wavelength converting material is disposed on the substrate. The wavelength converting material is configured to absorb light emitted by the semiconductor light emitting diode and emit light at a different wavelength. In the first region, the wavelength converting material coats an entire surface of the substrate. The substrate is disposed proximate a bottom surface of an optical cavity. A second region of wavelength converting material is disposed proximate a top surface of the optical cavity.

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San Jose, CA, United States of America

Han Ho Choi