Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Han-Hee Yoon

Kyoung-Bo Kim

Yong-Woo Park

Ki-Yong Lee

Yong-Sung Park

Sung-Chul Kim

Tae-Hoon Yang

Kil-Won Lee

Il-Jeong Lee

Dae-Woo Lee

Gun-Shik Kim

Moo-Jin Kim

Jae-Yong Kim

Jun-Sik Oh

Kwang-Hae Kim

Oh-Seob Kwon

Cheol-Ho Yu

Ki-ju Im

In-young Jung

Sung-Won Doh

Jang-Soon Im

Ji-Yong Noh

Moon-Jin Kim

A method of fabricating a thin film transistor, comprising steps of preparing a substrate; forming a polycrystalline silicon layer on the substrate; injecting impurities into the polycrystalline silicon layer for channel doping; patterning the polycrystalline silicon layer and forming a semiconductor layer; annealing the semiconductor layer in an HO atmosphere, and forming a thermal oxide layer on the semiconductor layer; forming a silicon nitride layer on the thermal oxide layer; forming a gate electrode at a location corresponding to a predetermined region of the semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate; and forming source and drain electrodes electrically connected with the semiconductor layer.

Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same

An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

Organic light emission diode display device and method of fabricating the same

An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.

Organic light emitting diode display and manufacturing method thereof

Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.

Halftone mask and manufacturing method thereof and method for forming film using the same

An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

Organic light emitting display apparatus

A SRAM core cell for a light-emitting display applicable to a data driver of an organic electro-luminescence light-emitting display device includes thin film transistors as a data memory for a data driver of the light-emitting display. The SRAM core cell also includes switching transistors and data memory transistors. The switching transistors are coupled to a bit line and a word line to select data writing or reading. The data memory transistors are coupled to a power voltage or a ground voltage to enable data writing and reading. The bit line and the word line are formed in first and second directions. The channels of the switching transistors and the data memory transistors are formed in an oblique direction with respect to the first and second directions.

SRAM core cell for light-emitting display

An organic light emitting display (OLED) device including a plurality of electroluminescent (EL) panels that are coupled with one another. In order to facilitate the coupling of the EL panels, respective data drivers are disposed at one side of pixels, and a scan driver and an emission control driver are formed in each of the EL panels. Thus, surfaces of the EL panels that are not connected to data drivers may be coupled with one another to form the OLED device. In the OLED device, a data driver is not formed at interfaces between the EL panels, and uniform pixels are arranged, so that non-uniformity in luminance may be prevented.

Organic light emitting display device

The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that each have a source region that corresponds to a source and a drain region that corresponds to a drain. An offset region may be formed between the first and second active regions. A single contact hole may reach both the offset region and the adjacent source/drain regions of the first and second active regions.

Thin film transistor with common contact hole and fabrication method thereof

Growing community of inventors

Yongin, South Korea

Han-Hee Yoon