System General Corporation

Han-Chung Tai

Hsin-Chih Chiang

Rui-Hong Lu

Chiu-Chih Chiang

A semiconductor device is provided and includes a substrate of a first conductivity type, a deep well of a second conductivity type, and a first high-side device. The deep well is formed on the substrate. The first high-side device is disposed within the deep well and includes an insulation layer of the second conductivity type, a well of the first conductivity type, first and second regions of the second conductivity type, and a first poly-silicon material. The insulation layer is formed on the substrate. The well is formed within the deep well. The first and second regions are formed within the well. The first poly-silicon material is disposed between the first region and the second region and on the deep well.

Semiconductor devices and formation methods thereof

A trim circuit for a power supply controller includes: a control circuit; at least a capacitance type programmable circuit connection; and a switching circuit, under control of the control circuit, the switching circuit selectively coupling the capacitance type programmable circuit connection to anyone of an operation voltage and a programming voltage, for determining a programming state of the capacitance type programmable circuit connection.

Trim circuit for power supply controller

A high side semiconductor structure is provided. The high side semiconductor structure includes a substrate, a first deep well, a second deep well, a first active element, a second active element and a doped well. The first deep well and the second deep well are formed in the substrate, wherein the first deep well and the second deep well have identical type of ion doping. The first active element and the second active element are respectively formed in the first deep well and the second deep well. The doped well is formed in the substrate and is disposed between the first deep well and the second deep well. The doped well, the first deep well and the second deep well are interspaced, and the type of ion doping of the first deep well and the second deep well is complementary with that of the doped well.

High side semiconductor structure

A semiconductor structure. The semiconductor comprises a substrate, a first deep well, a diode and a transistor. The first deep well is formed in the substrate. The diode is formed in the first deep well. The transistor is formed in the first deep well. The diode is connected to a first voltage, the transistor is connected to a second voltage, and the diode and the transistor are cascaded.

Semiconductor structure

A semiconductor device. The semiconductor comprises a substrate, a VDMOS, a JFET, a first electrode, a second electrode, a third electrode and a fourth electrode. The VDMOS is formed in the substrate. The JFET is formed in the substrate. The first electrode, the second electrode and a third electrode are connected to the VDMOS and used as a first gate electrode, a first drain electrode and a first source electrode of the VDMOS respectively. The second electrode, the third electrode and the fourth electrode are connected to the JFET and used as a second drain electrode, a second gate electrode and a second source electrode of the JFET respectively.

VDMOS and JFET integrated semiconductor device

A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The diode, coupled to the HVSCR in series, also has an anode and a cathode. The anode of the diode is coupled to the anode of the HVSCR, and the cathode of the diode is coupled to a terminal applied with a positive voltage. The diode has a second conductivity type zone that could be constructed to form several strips or small blocks spaced apart from each other. Those small blocks could be any shapes and arranged regularly or randomly.

Growing community of inventors

Kaohsiung, Taiwan

Han-Chung Tai