Dongbu Electronics, Co. Ltd.

Dongbu Hitek Co., Ltd.

Dongbu Hitekco., Ltd.

Han-Choon Lee

Jin-Woo Park

In-Cheol Baek

Dae-Young Kim

A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.

MIM capacitor and method of fabricating the same

A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.

Method of manufacturing complementary metal oxide semiconductor image sensor

A method for forming a metal line in a semiconductor device may include forming a silicon (Si) monolayer as an etching prevention layer over an exposed portion of a lower metal layer and sidewalls of an upper metal layer, middle metal layer, and the entire surface of curved photoresist patterns.

Method for forming metal line in semiconductor device

Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1&#x2dc;20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.

Semiconductor devices and fabrication methods thereof

A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250&#xb0; C. or higher, so that impurities are reduced and density is increased in the TaN thin film.

Manufacturing method of a semiconductor device

A System In Package (SIP) semiconductor device and a method for manufacturing a SIP device. A TiSiN film may be used as a diffusion barrier film for metal wiring in a SIP semiconductor device. A TiSiN film may provide relatively good step coverage in a relatively easy formation process, which may maximize reliability of a semiconductor device.

SIP semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, an interlayer insulating film formed over the substrate, a trench formed in the interlayer insulating film, a cover film formed over the inside surface of the trench, a barrier layer formed over the cover film; and a metal line formed over the barrier layer which fills and seals the trench. The metal line is in direct contact with the semiconductor substrate.

Semiconductor device including cover layer

The present invention provides a method of forming a diffusion barrier layer comprising a TaSiN layer. The method includes depositing a TaN layer into a via hole which penetrates an insulation layer exposing a first metal line layer, and transforming the TaN layer into a TaSiN layer using a radio frequency (RF) power and a (remote) plasma using SiHgas. Transforming the TaN layer into a TaSiN layer may include: loading a structure including the TaN layer into a plasma reaction chamber; injecting SiHgas into the plasma reaction chamber; and forming the TaSiN layer by reacting Si&#x2014; or Si atom-containing species with the TaN layer.

Method of forming a diffusion barrier layer using a TaSiN layer and method of forming a metal interconnection line using the same

A method for forming a metal line of a semiconductor device includes forming an interlayer insulation film over a semiconductor substrate, forming a trench for exposing at least a portion of the semiconductor substrate by using a selective etching process, and forming a diffusion barrier layer over the interlayer film and the inner walls of the trench, by using a plasma enhanced atomic layer deposition process in which a high frequency power generator is set to have a frequency of 13.56 MHz. The plasma enhanced atomic layer deposition process is performed with a base pressure in a chamber maintained at 1&#xd7;10to 3&#xd7;10torr.

Method for forming metal line in a semiconductor device

A method for fabricating a fully silicided gate, including forming a gate dielectric layer on a semiconductor substrate, depositing an amorphous silicon layer on the gate dielectric layer, forming a metallic layer on the amorphous silicon layer, depositing a hard mask on the metallic layer, wherein the amorphous silicon layer and the metal layer are silicided due to a thermal budget applied thereto, thereby forming a metal silicide layer, and patterning the metal silicide layer based on the hard mask to form a gate.

Method for fabricating fully silicided gate

A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic layer deposition. Forming a Tantalum (Ta) film by converting at least a portion of a Tantalum Nitride (TaN) film into Tantalum (Ta) by soaking the TaN film in a diluted HNOsolution.

Method of fabricating a thin film and metal wiring in a semiconductor device

A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact hole for partially exposing the metal wiring by selectively etching the interlayer dielectric layer, annealing the semiconductor substrate having the contact hole using NHgas, plasma processing the annealed semiconductor substrate using the NH, and forming a barrier layer on the interlayer dielectric layer having the contact hole.

Method of forming plug of semiconductor device

A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate, and converting a portion of the TaN film into a Ta film by reacting the TaN film with NO. The Ta film is formed to have a thickness which is about half of the thickness of the TaN film.

Method for fabricating a thin film and metal line of semiconductor device

A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NOto form a Ta film. The NOis formed by reacting NHwith O.

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Seoul, South Korea

Han-Choon Lee