Taiwan Semiconductor Manufacturing Comp. Ltd.

Han-Chi Lin

Tze-Liang Lee

Chung-Ting Ko

Yung-Chih Wang

Chunyao Wang

Ching Yu Huang

A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.

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Kaohsiung, Taiwan

Han-Chi Lin