Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Amorepacific Corporation

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Snu Rdb Foundation

Solum Co., Ltd.

Wits Co., Ltd.

Ddh Inc.

Han Bit Kim

Duck Hee Kim

Sang Jong Lee

Hyung Joon Kim

Yun Tae Lee

Kang Heon Hur

Kyung Ho Lee

Hyun-Keun Son

Keun Woo Kim

Bum-Soo Park

Young Gwan Ko

Su Bong Jang

Chul Kyu Kim

Yong Su Lee

Sung Han Kim

Seok Hwan Kim

Je-Gwang Yoo

Tae Wook Kang

Min Cheol Park

Jong-Bo Jung

Chung-Ha Kim

Seung-Ho Jang

Ji Young Chung

Sang-Hoon Kim

Jin Young Lee

Jung Wook Seo

Dong Yoon Shin

Tae Hee Lee

Yong Joon Jeon

Seonkeun Park

Sun Young Park

Jae Suk Sung

Ji Young Kim

Young Bok Yoon

Tae Yoon Kim

Tae Kyung Lee

Yong Ho Baek

Myung Sam Kang

Hyo Jin Lee

Won-Kyu Sung

Jinie Ryu

Young Sik Hur

Ki Won Chang

Jae Keun Lim

Chang Hyun Lim

Ik-Sang Kim

Dae-Hyun Park

Mi-Ja Han

Dae Hyun Park

Jun Seong Park

Jung Ho Shim

Dong Hyun Kim

Hye Yoon Park

Kyung Moon Jung

Chang-Sup Ryu

Jae Seob Lee

Eun Jung Jo

Jae Hyun Lim

Tae Ho Yun

Thanh Tien Nguyen

Ho Sik Rho

Sung Hee Kim

Eun Jin Kim

Kyoung Won Lee

Jong Min Baek

So Young Koo

Seung Hee Hong

Namhyun Kang

Joon-Sung Kim

Geon Soo Kim

Baek-Ki Kim

Nok Hyun Park

Won Seok Park

Heesun Kim

Seung Jae Song

Se Hyuk Park

Hong Soo Kim

Jung Chul Gong

Jin Young Roh

Kyu-Hee Han

Bumsoo Park

Kyung-ho Lee

Kyung Su Lee

Tae Hun Lee

Yang Je Lee

Sung Won Jeong

Young Hwan Son

Tae Ryong Lee

Eui-Hoon Kim

Myung Soo Huh

Doo Suk Kang

Jun Hyung Park

Bo Kun Choi

Eun Mi Kim

Jisu Hwang

Hyung Kyu Kim

Moon Il Kim

Joo Hwan Jung

Sung-Han Kim

Case for electronic device

Electronic device

A semiconductor package includes a first connection structure having first and second surfaces and including a first redistribution layer, a first semiconductor chip disposed on the first surface and having a first connection pad electrically connected to the first redistribution layer, a second semiconductor chip disposed around the first semiconductor chip on the first surface and having a second connection pad electrically connected to the first redistribution layer, an interconnection bridge disposed on the second surface to be spaced apart from the second surface and connected to the first redistribution layer through a connection member to electrically connect the first and second connection pads to each other, and a second connection structure disposed on the second surface to embed the interconnection bridge and including a second redistribution layer electrically connected to the first redistribution layer.

Semiconductor package

A thermoelectric module includes a stack structure of a plurality of insulating layers, a plurality of thermoelectric elements formed with the insulating layer interposed therebetween and including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device, a second electrode connected to the second-type semiconductor device, and a connection electrode connecting the first-type and second-type semiconductor devices, and a conductive via penetrating through the insulating layer to connect thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.

Thermoelectric module and method for manufacturing the same

A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Transistor substrate and display device including the same

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

Light emitting display device and manufacturing method thereof

A sensor actuator includes a first movable body on which an image sensor having an imaging plane is disposed, a second movable body spaced apart from the first movable body in a direction perpendicular to the imaging plane, a fixed body accommodating the first movable body and the second movable body, and a driver configured to provide driving force to the first movable body, wherein the first movable body and the second movable body move together in a direction parallel to the imaging plane, and the first movable body rotates relative to the second movable body.

Sensor actuator and camera module including the same

A coil component includes a support substrate disposed in the body, a coil portion disposed on the support substrate and comprising first, second, third and fourth coil layers spaced apart from each other, and a first external electrode and a second external electrode disposed to be spaced apart from each other on the body and connected to the first and fourth coil layers, respectively. Each of the second and third coil layers comprises a first metal layer, disposed on the support substrate, and a second metal layer disposed on the first metal layer to cover a side surface of the first metal layer and to be in contact with the support substrate. The second coil layer has a first bridge pattern exposed to a first side surface of two side surfaces, opposing each other, of the body. The third coil layer has a second bridge pattern exposed to a second side surface of the two side surfaces of the body.

Coil component

A camera module is provided. The camera module includes a lens barrel in which at least one lens is installed; and a lens holder to which the lens barrel is fixedly installed, wherein one of the lens holder and the lens barrel is provided with a coupling protrusion, and the other thereof is provided with a coupling groove into which the coupling protrusion is inserted, the lens holder is provided with a support portion that supports one end portion of the lens barrel, wherein the one end portion of the lens barrel is disposed between the coupling protrusion and the support portion, and the support portion of the lens holder elastically supports the lens barrel in an optical axis direction.

Camera module

A coil component includes a body; first and second external electrodes; an insulating substrate; a first coil layer and a second coil layer disposed in the body; a third coil layer and a fourth coil layer disposed on a first surface and a second surface of the insulating substrate, respectively; a first terminal portion disposed on the first surface of the insulating substrate, and connected to the first external electrode; a first insulating layer covering the third coil layer and the first terminal portion; a second terminal portion disposed on the second surface of the insulating substrate, and connected to the second external electrode; a second insulating layer covering the fourth coil layer and the second terminal portion; and vias.

Growing community of inventors

Yongin-si, South Korea

Han Bit Kim