Skhynix Inc.

Samsung Electronics Co., Ltd.

Han Bin Lee

Jae Young Lee

Jae Hyung Kim

Beom Ju Shin

Won Sun Park

Jin Kyu Bang

Hyo Jae Lee

Hua Li

Je Sun Moon

Sung Yeul Hong

Chang Ha Yu

So Jin Jeong

A memory device may include: a plurality of memory cells; a data manager for receiving data from the plurality of memory cells, and generating sub-data groups having a predetermined size, based on the received data; and a data compressor for detecting first-value bits having a first logic value among the bits in the received data, determining a number of target bits corresponding to each of the sub-data groups among the first-value bits to become 1 or less per sub-data group, and generating a plurality of compressed-data chunks including a logic value of the target bits and position information representing a position of the target bits in the data.

Memory device and operating method thereof

A data storage device may include a memory device divided into a plurality of logical units, and a controller configured to generate a first read command sequence and a second read command sequence for a first logical unit and a second logical unit, respectively, among the plurality of logical units, in response to an external command and configured to continuously output the first and second read command sequences to the memory device.

Data storage device and read operation control method thereof

A storage device may include a memory device and a memory controller. The memory device may include a plurality of data blocks, a plurality of replacement blocks to replace bad blocks, and a system block configured to store default system information. The memory controller may store, based on a result of comparing a lifetime of the memory device with a reference value, update system information corresponding to an update of the default system information, in a selected replacement block among the plurality of replacement blocks. The memory controller may control the memory device to set the selected replacement block as a target system block. The default system information may include one or more parameters corresponding to at least one operation among a read operation, a program operation, and an erase operation of the memory device.

Storage device and operating method thereof

An electronic device, and more particularly, a storage device for mitigating periods where a peak current occurs from currents overlapping is provided. The storage device includes a memory device including a plurality of dies and a memory controller controlling the memory device. The memory device generates status information about an amount of current consumed by each of the plurality of dies during a busy period when all of the plurality of dies are in a busy state, and wherein the memory controller determines, based on the status information, whether peak currents for multiple dies of the plurality of dies are consumed in a common sub-period of a plurality of sub-periods which span the busy period, and when it is determined that peak currents for multiple dies are consumed in the common sub-period, the memory controller controls the memory device to suspend an operation on a die among the plurality of dies.

Storage device, memory controller and operating method of the memory controller

An electronic device is provided. The electronic device includes a housing including a first plate, a second plate facing the first plate, and a side member surrounding a space between the first plate and the second plate and a circuit board, which is accommodated inside a housing and in which a wireless communication circuit is disposed. The second plate includes a slot filled with a non-conductive material. An area other than the slot is formed of a conductive material. The circuit board includes a conductive pattern formed on the circuit board along with the slot of the second plate, and the wireless communication circuit is configured to feed one point of the second plate adjacent to the slot to receive a signal of a first frequency band through an electrical path formed by the slot and to feed the conductive pattern to receive a signal of a second frequency band through the slot.

Growing community of inventors

Gyeonggi-do, South Korea

Han Bin Lee