Abb Schweiz Ag

Abb Research Ltd.

Abb Technology Ag

Abb Technology Ltd

Hamit Duran

Munaf Rahimo

Bruno Agostini

Francesco Agostini

Jan Vobecky

Slavo Kicin

Juergen Schuderer

Berk Yesin

Liliana Duarte

Chunlei Liu

Kati Hemmann

Christian Spindler

A module arrangement for power semiconductor devices, including one or more power semiconductor modules, wherein the one or more power semiconductor modules include a substrate with a first surface and a second surface being arranged opposite to the first surface, wherein the substrate is at least partially electrically insulating, wherein a conductive structure is arranged at the first surface of the substrate, wherein at least one power semiconductor device is arranged on the conductive structure and electrically connected thereto, wherein the one or more modules includes an inner volume for receiving the at least one power semiconductor device which volume is hermetically sealed from its surrounding by a module enclosure, wherein the module arrangement includes an arrangement enclosure at least partly defining a volume for receiving the one or more modules, and wherein the arrangement enclosure seals covers the volume.

Module arrangement for power semiconductor devices

A power-electronic arrangement comprising semiconductor components (), a heat exchanger (), and an electrically conductive element () is presented. The heat exchanger comprises evaporator channels () and condenser channels () for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.

Power-electronic arrangement

A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*10cmand 2*10cmand which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 &#x3bc;m. The doping profile of the anode layer declines such that a doping concentration in a range of 5*10cmand 1*10cmis reached between a first depth, which is at least 20 &#x3bc;m, and a second depth, which is at maximum 50 &#x3bc;m. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.

Fast recovery diode

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Turgi, Switzerland

Hamit Duran