Applied Materials, Inc.

Advanced Thermal Sciences Corporation

B/e Aerospace, Inc.

Hamid Tavassoli

Douglas A Buchberger, Jr

Kallol Bera

Shahid Rauf

Daniel John Hoffman

Richard Charles Fovell

Kartik Ramaswamy

Kenneth S Collins

Andrew Nguyen

Paul Brillhart

Douglas H Burns

James D Carducci

Zhigang Chen

Ajit Balakrishna

Xiaoping Zhou

Kenneth Wesley Cowans

Glenn Zubillaga

Surajit Kumar

Shane C Nevil

William W Cowans

Isaac Millan

Fernando Silveira

Ying Di Zhang

Leonid Dorf

Douglas Buchberger

Walter R Merry

Brad L Mays

Chetan Mahadeswaraswamy

Duy D Nguyen

Yashaswini Pattar

Tina Tsong

Yan Ye

Muhammad M Rasheed

Keith A Miller

Keiji Horioka

Martin Jeffrey Salinas

Cheng-Hsiung Matt Tsai

Steven Victor Sansoni

Muhannad Mustafa

Michael C Kutney

Steven Lane

Roger Alan Lindley

Goichi Yoshidome

Vikash Banthia

Olga Regelman

Heeyeop Chae

Ming-Feng Wu

Andrew Tomko

Williams W Cowans

Isaac Millian

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Symmetric plasma process chamber

Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

Process kit design for in-chamber heater and wafer rotating mechanism

Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

Collimator for use in a physical vapor deposition chamber

Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base.

Distributed electro-static chuck cooling

Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

Apparatus for controlling temperature uniformity of a substrate

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching

In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Electron beam plasma source with remote radical source

Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

Apparatus for controlling the temperature uniformity of a substrate

An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity

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Cupertino, CA, United States of America

Hamid Tavassoli