Applied Materials, Inc.

Other

Lam Research Corporation

Applied Material, Inc.

Hamid Noorbakhsh

Kartik Ramaswamy

Sergio Fukuda Shoji

Anwar Husain

Jason C Della Rosa

Evans Yip Lee

Brad L Mays

James D Carducci

Douglas A Buchberger, Jr

Dmitry Lubomirsky

Chunlei Zhang

Siamak Salimian

Paul E Luscher

Vladimir Knyazik

Jennifer Y Sun

Michael D Welch

Haitao Wang

Chetan Mahadeswaraswamy

Duy D Nguyen

Vijay D Parkhe

Bryan Y Pu

Zheng John Ye

Hongching Shan

Konstantin Makhratchev

Jisoo Kim

Hongqing Shan

Sumanth Banda

Xiaoping Zhou

Wonseok Lee

Reyn Wakabayashi

Usama Dadu

Yan Ye

Shiang-Bau Wang

Ananda H Kumar

Shamouil Shamouilian

S M Reza Sadjadi

Sean S Kang

David H Quach

Claes H Bjorkman

Walter R Merry

Nobuhiro Yoshida

David Palagashvili

Dan Katz

Xiaoye Zhao

Ippei Nakagawa

Kenny Linh Doan

Fernando Silveira

Jaeyong Cho

Kang-Lie Chiang

Richard Raymond Mett

Shane C Nevil

Efrain Quiles

Robert B Hagen

Roland R Smith

Yashaswini Pattar

Bryan Liao

Kaushik Vaidya

Tina Tsong

Robert D Greenway

Jason Della Rosa

John Zheng Ye

Anantha K Subramani

James Rogers

Kartik Bhupendra Shah

Biraja Prasad Kanungo

Arnold Kholodenko

Kadthala Ramaya Narendrnath

Ren-Guan Duan

Ajit Balakrishna

Dennis Stanley Grimard

Nils Johansson

Jong Mun Kim

Vijaykumar Krithivasan

Gerhard M Schneider

Liang-Guo Wang

Larry D Elizaga

Zhifeng Sui

Yu Guan

Jim Carducci

Hung Dao

Hongging Shan

Nisha Prakash Holla

Junhan Yuh

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.

L-motion slit door for substrate processing chamber

Embodiments of a plug for use in an electrostatic chuck are provided herein. In some embodiments, a plug for use in an electrostatic chuck includes a polymer sleeve having a central opening; and a core disposed in the central opening of the polymer sleeve, the core having a central protrusion and a peripheral ledge, wherein an outer surface of the core includes a helical channel extending from a lower surface of the core towards the peripheral ledge to at least partially define a gas flow path through the plug, and wherein the peripheral ledge is disposed between an upper surface of the polymer sleeve and the lower surface of the core.

Helical plug for reduction or prevention of arcing in a substrate support

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon.

Methods and apparatus for preventing or reducing arcing of an electrostatic chuck in a process chamber. In some embodiments, a method of preventing or reducing arcing of an electrostatic chuck includes forming a first recess in at least a portion of a sidewall of the electrostatic chuck and filling the first recess with a conformable dielectric material that remains conformable (elastic) over a temperature range of at least approximately zero degrees Celsius to approximately 80 degrees Celsius. In some embodiments, the first recess is filled with the conformable dielectric material such that the conformable dielectric material does not bond to at least one surface of the first recess. The conformable dielectric material may also be used to fill a second recess in a dielectric sleeve adjacent to the electrostatic chuck.

Methods and apparatus for reducing high voltage arcing in semiconductor process chambers

Embodiments of process kits for use in substrate processing chambers are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion; wherein the annular electrode includes a first channel extending from a lower surface of the lower portion to the annular channel and a second channel extending from the lower surface of the lower portion to the annular channel; wherein the annular electrode is configured to flow a coolant from the first channel to the second channel via the annular channel to cool the annular electrode; and wherein the annular electrode includes at least one of a dielectric coating or a ceramic cap to reduce or prevent arcing between the annular electrode and the electrostatic chuck.

Temperature controlled secondary electrode for ion control at substrate edge

A seal member includes a bottom portion, a first side wall portion, a second side wall portion, and an outer wall portion. At least one of the first side wall portion and the second side wall portion is provided to be outwardly widened from the bottom portion toward the outer wall portion with respect to a virtual plane perpendicular to an axis. The outer wall portion has a recessed portion recessed toward a bottom portion side, between the first side wall portion and the second side wall portion, and the outer wall portion forms a first lip region in a region including the first side wall portion, and forms a second lip region in a region including the second side wall portion, with the recessed portion being sandwiched therebetween.

Seal member

Methods and apparatus for dechucking a wafer from a surface of an electrostatic chuck (ESC). In some embodiments, a method comprises reducing a pressure of a gas applied to a backside of the wafer to approximately zero psi; reducing a downward pressure in a cylinder bore of a lifting actuator to approximately atmospheric pressure while a processing volume of the processing chamber is in a vacuum state to create a constant upward force on the wafer, the constant upward force less than a breaking force of the wafer; and sweeping a voltage applied to the ESC to dechuck the wafer; and monitoring a sensor on the lifting actuator that is interposed between a chucking position of the lifting actuator and a transfer position of the lifting actuator to detect when the wafer is dechucked.

Methods and apparatus for dechucking wafers

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.

Showerhead having a detachable gas distribution plate

Embodiments of a showerhead for use in a substrate processing chamber are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes an upper plate having an outer gas inlet fluidly coupled to an outer recursive gas path and an inner gas inlet fluidly coupled to an inner recursive gas path; and a lower plate having an upper surface bonded to the upper plate and a lower surface having a plurality of outer gas distribution holes and a plurality of inner gas distribution holes, wherein the upper surface includes an outer recess to define an outer annular gas plenum fluidly coupled to the outer gas inlet and to the plurality of outer gas distribution holes and an inner recess to define one or more inner annular gas plenums fluidly coupled to the inner gas inlet and to the plurality of inner gas distribution holes.

High power showerhead with recursive gas flow distribution

Implementations described herein provide a substrate support assembly that includes a seal band. The seal band protects an adhesive layer that is disposed between an electrostatic chuck (ESC) and a cooling plate of the substrate support assembly. In one example, a substrate support assembly includes an electrostatic chuck and a cooling plate. A bonding layer secures a bottom surface of the electrostatic chuck to a top surface of the cooling plate. The bonding layer has an adhesive layer and a seal band. The seal band circumscribes and protects the adhesive layer. The seal band has a ring shaped body. The ring shaped body has a top surface connected to a bottom surface by an inner surface and an outer surface. The top surface and the bottom surface angled less than 85 degrees from the inner surface. The outer surface has an indent formed therein.

Ceramic electrostatic chuck having a V-shape seal band

Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.

Electrostatic chuck assembly having a dielectric filler

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.

Extended detachable gas distribution plate and showerhead incorporating same

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Feedforward temperature control for plasma processing apparatus

The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.

Edge ring assembly for a substrate support in a plasma processing chamber

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Showerhead having a detachable high resistivity gas distribution plate

Growing community of inventors

Fremont, CA, United States of America

Hamid Noorbakhsh