Everspin Technologies, Inc.

Hamid Almasi

Sumio Ikegawa

Han Kyu Lee

Sanjeev Aggarwal

Syed M Alam

Dimitri Houssameddine

Jason A Janesky

Frederick Charles Neumeyer

Cristian P Masgras

Iftekhar Rahman

Pedro Sanchez

Kerry Joseph Nagel

Shimon

The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

Systems and methods for monitoring and managing memory devices

A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.

Magnetoresistive devices and methods therefor

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Chandler, AZ, United States of America

Hamid Almasi