Nxp B.v.

Halldor O Olafsson

Thomas Christian Roedle

Elnar O Sveinbjornsson

Carl F Allerstam

Gudjon I Gudjonsson

A method of manufacturing a semiconductor device based on a SiC substrate involves forming an oxide layer on a Si-terminated face of the SiC substrate at an oxidation rate sufficiently high to achieve a near interface trap density below 5&#xd7;10cm; and annealing the oxidized SiC substrate in a hydrogen-containing environment, to passivate deep traps formed in the oxide-forming step, thereby enabling manufacturing of a SiC-based MOSFET having improved inversion layer mobility and reduced threshold voltage. It has been found that the density of DTs increases while the density of NITs decreases when the Si-face of the SiC substrate is subject to rapid oxidation. The deep traps formed during the rapid oxidation can be passivated by hydrogen annealing, thus leading to a significantly decreased threshold voltage for a semiconductor device formed on the oxide.

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Reykjavik, Iceland

Halldor O Olafsson