Intel Corporation

Halady Arpit Rao

Mark T Bohr

Rishabh Mehandru

Rui Ma

Ayan Kar

Kalyan C Kolluru

Nathan D Jack

Nicholas A Thomson

Embodiments include diode devices and transistor devices. A diode device includes a first fin region over a first conductive region and an insulator region, and a second fin region over a second conductive and insulator regions, where the second fin region is laterally adjacent to the first fin region, and the insulator region is between the first and second conductive regions. The diode device includes a first conductive via on the first conductive region, where the first conductive via is vertically adjacent to the first fin region, and a second conductive via on the second conductive region, where the second conductive via is vertically adjacent to the second fin region. The diode device may include conductive contacts, first portions on the first fin region, second portions on the second fin region, and gate electrodes between the first and second portions and the conductive contacts.

Substrate-less FinFET diode architectures with backside metal contact and subfin regions

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Hillsboro, OR, United States of America

Halady Arpit Rao