Matsushita Electric Industrial Co., Ltd.

Hakuhei Kawakami

Kenzo Hatada

Takeshi Ishihara

Takashi Hirao

Yuji Yamasaki

Masahisa Iida

Hideya Esaki

Kiyoto Oota

A semiconductor integrated circuit includes: a first n-well defined in a p-type semiconductor region; word lines; data lines; and a DRAM array. In the array, memory cells are arranged in matrix over the first n-well. Each memory cell includes a p-channel MOS access transistor and a capacitor. The access transistor has its gate connected to an associated one of the word lines, its source connected to an associated one of the data lines and its drain connected to the capacitor. The integrated circuit further includes: a row of sense amplifiers coupled to the data lines; a word line driver for driving the word lines; and a power supply circuit. The power supply circuit receives an external supply voltage, generates internal supply voltages by stepping down the external supply voltage and then applies the internal supply voltages to the sense amplifiers, word line driver and first n-well.

Semiconductor integrated circuit

The present invention is an electronic time indicating signal clock of a hand indication type. It has a time indicating signal generating function marking time by one or more electronic tones and a correction function in which the number of tones made for a set time may be easily corrected.

Electronic clock having audible time indication

A MOS type semiconductor device, wherein at least one oblique face is provided on at least a part of a gate electrode which is provided on a principal face of said substrate with a gate insulation film inbetween, and at a specific depth from the oblique face, that is, in parallel with this oblique face, an ion-implanted layer is provided in a manner to obliquely cross the surface of said substrate. In this MOS type semiconductor device the channel is made immediately underneath the surface of the substrate and in the ion-implanted layer, and therefore the channel length is determined by the thickness of the ion-implanted layer. By controlling the thickness of the ion-implanted layer, a short channel length, which is required for improving the operating speed and/or the handling current capability of MOS type semiconductor devices, is obtainable.

MOS type semiconductor device

A time signal clock is equipped with a time indicating graduation, a dividing circuit for dividing a standard oscillation frequency, a drive for time indication provided with an electronic circuit for driving a pointer over the time indicating graduation by the signal from the dividing circuit, a time detecting device provided with a time detecting circuit for detecting a set time, a time signal electronic circuit receiving as its input signal the output signal from the time detecting device and a time signal device operated by the signal from the time signal electronic circuit.

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Neyagawa, Japan

Hakuhei Kawakami