Samsung Electro-mechanics Co., Ltd.

Georgia Tech Research Corporation

Samsung Electro-mechanics

Haksun Kim

Chang-Ho Lee

Joy Laskar

Wangmyong Woo

Jaejoon Chang

Dong Ho Lee

Ki Seok Yang

Kyu Hwan An

Hyungwook Kim

Ockgoo Lee

Minsik Ahn

Kyutae Lim

Jeonghu Han

Kihong Kim

Jeongsuk Lee

Jongmin Park

Taejoong Song

Youngsik Hur

Younsuk Kim

Changhyuk Cho

Seongsoo Lee

Sangjin Byun

Jungsuk Lee

Songcheol Hong

Kijoong Kim

Unghan Moon

Li Lee

Jaechan Lee

Kwanwoo Kim

Hyunhak Kim

Yunseok Kim

Changsoo Lim

Sanghee Kim

Hyogeun Bae

Disclosed herein are an electronic paper display device and a method for manufacturing the same. The electronic paper display device including an electronic paper panel and various components, includes: a substrate made of an insulating material and being provided with wirings on a surface thereof and therein; and a driving IC bonded to the substrate and controlling the electronic paper panel to display an image, whereby it be manufactured by a more simplified process as compared to that of the related art and can remarkably reduce product costs by using more inexpensive components that are necessary as compared to those of the related art.

Electronic paper display device and method for manufacturing the same

Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators

Embodiments of the invention may provide for power amplifier systems and methods. The systems and methods may include a power amplifier that generates a first differential output signal and a second differential output signal, a primary winding comprised of a plurality of primary segments, where a first end of each primary segment is connected to a first common input port and a second end of each primary segment is connected to a second common input port, where the first common input port is operative to receive the first differential output signal, and where the second common input port is operative to receive the second differential output signal, and a single secondary winding inductively coupled to the plurality of primary segments.

Multi-segment primary and multi-turn secondary transformer for power amplifier systems

Embodiments of the invention may provide for a digital LINC (linear amplification with nonlinear components) transmitter. The digital LINC transmitter may include a signal component separator, at least one digital delay modulator, a frequency synthesizer, at least one power amplifier, a power combiner, an antenna, and a mismatch compensator. Additionally, systems and methods may be provided for compensating for phase and amplitude mismatches between two signal paths.

Digital linear amplification with nonlinear components (LINC) transmitter

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and &#x2212;1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure

Systems, methods, and apparatuses are provided for linear envelope elimination and restoration transmitters that are based on the polar modulation operating in conjunction with the orthogonal recursive predistortion technique. The polar modulation technique enhances the battery life by dynamically adjusting the bias level. Further, the analog orthogonal recursive predistortion efficiently corrects amplitude and phase errors in radio frequency (RF) power amplifiers (PA) and enhances the PA output capability. Additionally, even-order distortion components are used to predistort the input signal in a multiplicative manner so that the effective correction bandwidth is greatly enhanced. Also, the predistortion scheme, which uses instantaneously feed-backed envelope distortion signals, allows for correction of any distortion that may occur within the correction loop bandwidth, including envelope memory effects.

Systems, methods, and apparatuses for linear envelope elimination and restoration transmitters

Systems and methods may be provided for a power amplifier system. The systems and methods may include a plurality of power amplifiers, where each power amplifier includes at least one output port. The systems and methods may also include a plurality of primary windings each having a first number of turns, where each primary winding is connected to at least one output port of the plurality of power amplifiers, and a single secondary winding inductively coupled to the plurality of primary windings, where the secondary winding includes a second number of turns greater than the first number of turns.

Systems and methods for power amplifiers with voltage boosting multi-primary transformers

System and methods are provided for multi-path orthogonal recursive predistortion. The systems and methods may include generating a first orthogonal signal and a second orthogonal signal, where the first and second signals are orthogonal components of an input signal and processing, at a first predistortion module, the first orthogonal signal and a first error correction signal to generate a first predistorted signal. The system and methods may also include processing, at a second predistortion module, the second orthogonal signal and a second error correction signal to generate a second predistorted signal, and providing the generated first and second predistorted signals to a nonlinear device, where the nonlinear device generates an output based upon the first and second predistorted signals, where the first error correction signal is determined based upon an analysis of the output and the first predistorted signal, and where the second error correction signal is determined based upon an analysis of the output and the second predistorted signal.

Systems, methods, and apparatuses for multi-path orthogonal recursive predistortion

Spectrum-sensing algorithms and methods may be provided for use in cognitive radios and other applications. The spectrum-sensing algorithms and methods may include receiving an input spectrum having a plurality of channels, performing a coarse scan of the plurality of channels of the input spectrum to determine one or more occupied candidate channels and vacant candidate channels, where the coarse scan is associated with a first resolution bandwidth and a first frequency sweep increment, performing a fine scan of the occupied candidate channels and the vacant candidate channels to determine actually occupied channels and actually vacant channels, where the fine scan is associated with a second resolution bandwidth and a second frequency sweep increment, and storing an indication of the actually occupied channels and the actually vacant channels.

Spectrum-sensing algorithms and methods

Systems and methods are disclosed for providing a linear polar transmitter. The systems and methods may include generating an input amplitude signal and an input phase signal, where the input amplitude signal and the input phase signal are orthogonal components of an input signal, and where the input amplitude signal and the input phase signal are generated on respective first and second signal paths. The systems and methods may also include processing the input amplitude signal along the first signal path using an amplitude error signal to generate a predistorted amplitude signal, and processing the input phase signal along the second signal path using an phase error signal to generate a predistorted phase signal. The systems and methods may also include providing the predistorted amplitude signal along the first signal path and the predistorted phase signal along the second signal path to a power amplifier to generate an output signal, where the amplitude error signal is generated from a comparison of at least an amplitude portion of the output signal with the predistorted amplitude signal and where the phase error signal is generated from a comparison of at least a phase portion of the output signal with the predistorted phase signal.

Systems, methods, and apparatuses for linear polar transmitters

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a &#x2212;60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure

Example embodiments of the invention may provide systems and methods for multiple transformers. The systems and methods may include a first transformer that may include a first primary winding and a first secondary winding, where the first primary winding may be inductively coupled to the first secondary winding, where the first transformer may be associated with a first rotational current flow direction in the first primary winding. The systems and methods may further include a second transformer that may include a second primary winding and a second secondary winding, where the second primary winding may be inductively coupled to the second secondary winding, where the second transformer may be associated with a second rotational current flow direction opposite the first rotational current flow direction in the second primary winding, where a first section of the first primary winding may be positioned adjacent to a second section of the second primary winding, and where the adjacent first and second sections may include a substantially same first linear current flow direction.

Compact multiple transformers

Embodiments of the invention may provide for a load regulation tuner that reduces the load regulation effect. The load regulation tuner may include a load current controlled current source that is responsive to a load current from a power transistor of a linear regulator, where the load current controlled current source includes a sensing transistor that generates a fraction of the load current as a sensed partial load current. The load regulation tuner may also include a resistor in parallel with a load current controlled current source, and where the paralleled resistor and the load current controlled current source form at least a portion of a feedback block that adjusts an operation of the linear regulator to provide a substantially constant load voltage.

Systems, methods, and apparatuses for implementing a load regulation tuner for linear regulation

Systems and methods may be provided for threshold determinations for spectrum sensing. The systems and methods may include receiving a false alarm rate, where the false alarm rate is associated with false occupancy identifications of a spectrum segment, determining a noise floor as a function of a noise figure and characteristics of a multi-resolution spectrum sensing (MRSS) window, and calculating a sensing threshold based at least in part upon the false alarm rate and the noise floor. The systems and methods may also include determining whether a portion of an RF spectrum is occupied based at least in part on the calculated sensing threshold.

Systems and methods for determining sensing thresholds of a multi-resolution spectrum sensing (MRSS) technique for cognitive radio (CR) systems

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, &#x2212;60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure

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Daejeon, South Korea

Haksun Kim