Asml Netherlands B.v.

Asml Holding N.v.

Hakki Ergün Cekli

Willem Seine Christian Roelofs

Richard Johannes Franciscus Van Haren

Alexander Ypma

Stefan Cornelis Theodorus Van Der Sanden

Weitian Kou

Michiel Kupers

Erik Henri Adriaan Delvigne

Boris Menchtchikov

Xing Lan Liu

Wendy Johanna Martina Van De Ven

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Frank Johannes Jacobus Van Boxtel

Edo Maria Hulsebos

Cédric Désiré Grouwstra

Erik Johannes Maria Wallerbos

Marc Hauptmann

Chenxi Lin

David Frans Simon Deckers

Jean-Philippe Xavier Van Damme

Hadi Yagubizade

Cyrus Emil Tabery

Loek Johannes Petrus Verhees

Lydia Marianna Vergaij-Huizer

Masashi Ishibashi

Manuel Giollo

Iryna Dovbush

Ahmet Koray Erdamar

Youping Zhang

Peter Ten Berge

Ralph Brinkhof

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Simon Hendrik Celine Van Gorp

Simon Philip Spencer Hastings

Manouk Rijpstra

Dag Sonntag

Matthijs Cox

Tran Thanh Thuy Vu

Rizvi Rahman

Maurits Van Der Schaar

Ruud Hendrikus Martinus Johannes Bloks

Christopher Charles Ward

Laurentius Johannes Adrianus Van Bokhoven

Elliott Gerard McNamara

Emil Peter Schmitt-Weaver

Michael James Lercel

Marc Jurian Kea

Chi-Hsiang Fan

Geoffrey Alan Schultz

Ruben Alvarez Sanchez

Pierre-Yves Jerome Yvan Guittet

Lowell Lane Baker

Ralph Timotheus Huijgen

Liping Ren

Sudharshanan Raghunathan

Christiaan Theodoor De Ruiter

Maaike Van't Westeinde

Marcel Theodorus Maria Van Kessel

Shih-Chin Liu

Wei Duan

Arie Jeffrey Den Boef

Everhardus Cornelis Mos

Wim Tjibbo Tel

Hendrik Jan Hidde Smilde

Yi Zou

Peter Hanzen Wardenier

Yana Cheng

Daan Maurits Slotboom

Leon Paul Van Dijk

Irina Lyulina

Victor Emanuel Calado

Davit Harutyunyan

Erik Jensen

Georgios Tsirogiannis

Vahid Bastani

Maxime Philippe Frederic Genin

Robert Jan Van Wijk

Yue-Lin Peng

Tzu-Chao Chen

Güneş Nakiboglu

Jelle Nije

Güneş Nakìboglu

Maaike Van T Westeinde

Güneş Nakíboglu

Josselin Pello

Cëdric Dësirë Grouwstra

Güneş Nak{dot Over (i)}boglu

A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

Method for determining root cause affecting yield in a semiconductor manufacturing process

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Method of obtaining measurements, apparatus for performing a process step, and metrology apparatus

A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

Method to predict yield of a device manufacturing process

A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

Lithographic method and lithographic apparatus

A device manufacturing method, the method including: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

Device manufacturing methods

A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

Method of determining a position of a feature

A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.

Method of adapting feed-forward parameters

A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data. Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

Method for determining a control parameter for an apparatus utilized in a semiconductor manufacturing process

A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.

Maintaining a set of process fingerprints

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Hakki Ergün Cekli