Samsung Electronics Co., Ltd.

Hak Seon Kim

Chang Heon Lee

Sung Kweon Baek

Jae Hwa Seo

Byung Joo Go

A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.

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Seoul, South Korea

Hak Seon Kim