Kabushiki Kaisha Toshiba

Japan Display Inc.

Hajime Yamaguchi

Nobuyoshi Saito

Kentaro Miura

Rei Hasegawa

Shintaro Nakano

Tomomasa Ueda

Tatsunori Sakano

Kohki Takatoh

Takashi Miyazaki

Rieko Fukushima

Yasushi Tomioka

Tatsuo Saishu

Yuya Maeda

Hitoshi Nagato

Yuko Kizu

Yutaka Nakai

Yukio Kizaki

Shinya Murai

Masao Tanaka

Yasushi Kawata

Isao Amemiya

Shogo Yamaguchi

Masahiro Baba

Haruhiko Okumura

Shinichi Uehara

Ayako Takagi

Tsuyoshi Hioki

Shintaro Enomoto

Haruhiko Toyama

Hideyuki Nakao

Takuya Kawamura

Haruhi Oooka

Masaki Atsuta

Toshio Shirakihara

Machiko Ito

Mitsue Fujinuki

Hideaki Fukuzawa

Takeshi Yamaguchi

Yoshihiko Fuji

Tomio Ono

Michiko Hara

Goh Itoh

Masako Kashiwagi

Akiko Hirao

Hitoshi Kobayashi

Yujiro Hara

Yukitami Mizuno

Toshiya Yonehara

Akio Murayama

Shuichi Uchikoga

Miki Mori

Yoshihisa Mizutani

Seizaburo Shimizu

Devin Giddings

Hitoshi Kobayahi

According to one embodiment, a display device includes a first submodule having a display panel, a second submodule having a cover member located on the display panel, and a first decoupling layer located between the first submodule and the second submodule, and each of the first submodule and the second submodule has a single neutral plane.

Display device

According to one embodiment, there is provided a display device which includes an insulating substrate having a bend area, and a wiring line located in the bend area. The bend area is bent about a bend axis extending in a first direction. The wiring line in the bend area has a first portion which extends in the first direction and a second portion which extends in a direction intersecting the first portion and is connected to the first portion. A first angle formed by the first portion and the second portion is less than 90 degrees.

According to one embodiment, a display device includes a first substrate and an external circuit, the first substrate including a first area, a second area, and wirings, the first area including a display area in which pixels are arranged the external circuit being mounted on the second area. The wirings are electrically connected to the external circuit, provided in the first area and the second area, and arranged in the first direction. At least one of the wirings is inclined with respect to a second direction orthogonal to the first direction in a first portion of the second area. The first substrate is bent in the first portion.

According to one embodiment, a display device includes a first substrate including a first area and a second area, the first area including a display area where pixels are arranged, and the second area being adjacent to the first area and where wirings are arranged, wherein the wirings are covered with a protection layer, the second area includes a peripheral area and a central area in an arrangement direction of the wirings, and a thickness of at least one of the first substrate and the protection layer varies between the peripheral area and the central area.

According to one embodiment, a display device includes an insulating substrate having a display area, a pad area and a bend area, wiring lines, a first protective film and a second protective film. The wiring lines are elongated from the display area to the pad area. The first protective film is located on the insulating substrate and the wiring lines. The second protective film is located on the first protective film and is formed of an organic insulating material different from that of the first protective film.

According to one embodiment, a liquid display device includes a liquid crystal display panel provided with pixel which includes pixel electrode, and has gradation values that vary, a driver which drives the pixel electrode, and a processor which supplies, if the gradation value of the pixel varies, the driver with a correction image signal based on an addition image signal in which a voltage based on the gradation value and a compensation voltage are added. The compensation voltage is based on pixel capacitances prior to and subsequent to variation of the gradation value and a voltage subsequent to the variation of the gradation value.

Liquid crystal display device, method of driving the same and drive processing device

According to one embodiment, a semiconductor device includes an oxide semiconductor transistor. The oxide semiconductor transistor includes a semiconductor layer including an oxide semiconductor, the semiconductor layer including a source region and a source electrode. The source electrode includes a source conductive layer including copper, a first tantalum-containing region provided between the source conductive layer and the source region, the first tantalum-containing region including tantalum, a first low nitrogen composition region provided between the first tantalum-containing region and the source region, the first low nitrogen composition region including TaN(0&#x3c;x1&#x3c;0.5), and a first high nitrogen composition region provided between the first low nitrogen composition region and the source region, the first high nitrogen composition region including TaN(0.5&#x2266;x2&#x3c;1).

Semiconductor device and method for manufacturing same

According to one embodiment, a method for manufacturing a display element is disclosed. The method can include forming a peeling layer, forming a resin layer, forming a barrier layer, forming an interconnect layer, forming a display layer, and removing. The peeling layer is formed on a major surface of a base body. The major surface has first, second, and third regions. The peeling layer includes first, second, and third peeling portions. The resin layer is formed on the peeling layer. The resin layer includes first and second resin portions. The barrier layer is formed on the first, second, and third peeling portions. The interconnect layer is formed on the barrier layer. The display layer is formed on the interconnect layer. The first peeling portion is removed from the first resin portion and the second peeling portion is removed from the second resin portion.

Method for manufacturing display element, display element, and display device

According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.

Semiconductor device and imaging device

According to one embodiment, a liquid crystal optical device includes first and second substrate units and a liquid crystal layer. The first substrate unit includes a first substrate having a first major surface, and a first electrode extending along a first direction. The second substrate unit includes a second substrate and a first opposing electrode. The liquid crystal layer is provided between the first substrate unit and the second substrate unit and includes a first portion provided on a side of the first substrate unit and a second portion provided on a side of the second substrate unit. The first portion has a vertical alignment. The second portion has a horizontal alignment. A long axis of liquid crystal molecules in the second portion aligns along a second direction perpendicular to the first direction.

Liquid crystal optical device and stereoscopic image display device

A liquid crystal optical device of an embodiment includes: a first substrate unit; a second substrate unit; and a liquid crystal layer interposed between the first substrate unit and the second substrate unit. The liquid crystal molecules on a side of a first alignment layer of the first substrate unit is aligned perpendicularly to a first principal surface of the first substrate unit while the liquid crystal molecules on a side of a second alignment layer of the second substrate unit are aligned horizontally along a second direction. The opposing electrode includes: a first region and a second region, the first region has N first openings, and the second region includes M second openings, N being an integer of 0 or greater, M being an integer of 1 or greater, M being greater than N.

Liquid crystal optical device, image display device, and imaging device

According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer.

Thin film transistor, manufacturing method of same, and display device

According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5&#xd7;10atm/cm, and not more than 10atm/cm, respectively.

Thin film transistor, method for manufacturing same, and display device

Growing community of inventors

Kanagawa-ken, Japan

Hajime Yamaguchi