Sony Corporation

Dainippon Screen Mfg. Co., Ltd.

Hajime Ugajin

Hayato Iwamoto

Tsuyoshi Okumura

Akiyoshi Nakano

Kei Kinoshita

Nobuyasu Hiraoka

A substrate treatment apparatus including a substrate holding mechanism for holding a substrate; a first brush made of an elastically deformable material and having a cleaning surface inclined with respect to a perpendicular direction perpendicular to one surface of the substrate held by the substrate holding mechanism; a first brush moving mechanism for moving the first brush with respect to the substrate held by the substrate holding mechanism; a controller for controlling the first brush moving mechanism so that the cleaning surface is made to contact with a peripheral area on the one surface and a peripheral end face of the substrate held by the substrate holding mechanism; and a first pushing pressure holding mechanism for holding a pushing pressure of the first brush in the perpendicular direction to the peripheral area on the one surface of the substrate at a preset pushing pressure.

Substrate treatment apparatus and substrate treatment method

An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid Lat a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L, a diluting liquid Lfor the etchant liquid Lis discharged at a thin portion of the film for processing.

Etching method and etching device

Growing community of inventors

Kanagawa, Japan

Hajime Ugajin